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GT43100 PDF预览

GT43100

更新时间: 2024-11-07 17:01:31
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 380K
描述
100V,3A,General Purpose NPN Bipolar Transistor

GT43100 数据手册

 浏览型号GT43100的Datasheet PDF文件第2页浏览型号GT43100的Datasheet PDF文件第3页浏览型号GT43100的Datasheet PDF文件第4页 
NPN Silicon Epitaxial Planar Transistor  
GT43100  
Features  
Low Collector-Emitter saturation voltage VCE(sat)  
and corresponding low RCE(sat)  
High collector current capability  
High collector current gain  
Improved efficiency due to reduced heat generation  
Mechanical Data  
Case: SOT-23  
Molding compound: UL flammability classification rating 94V-0  
Terminals: Tin-plated; solderability per MIL-STD-202, Method 208  
SOT-23  
Ordering Information  
Part Number  
Package  
SOT-23  
Shipping Quantity  
Marking Code  
GT43100  
3000 pcs / Tape & Reel  
T43100  
Maximum Ratings (@ TA = 25°C unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Current (Continuous)  
Collector Current (Pulse)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
Unit  
V
140  
100  
7
V
V
3
A
ICM  
5
A
Thermal Characteristics  
Parameter  
Power Dissipation *1  
Symbol  
PD  
Value  
490  
Unit  
mW  
°C/W  
°C/W  
°C/W  
°C  
Thermal Resistance Junction-to-Air *2  
Thermal Resistance Junction-to-Case *2  
Thermal Resistance Junction-to-Lead *2  
Junction Temperature Range  
RθJA  
RθJC  
RθJL  
TJ  
124  
64  
52  
-55 ~ +150  
-55 ~ +150  
Storage Temperature Range  
TSTG  
°C  
Notes:  
1. FR−4 @ 100 mm2, 1 oz. copper traces  
2. The data tested by surface mounted on 1 inch2 FR-4 board with 2OZ copper  
STM0685A: August 2022  
www.gmesemi.com  
1

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