Datasheet > GT40T321

GT40T321

更新时间： 2024-11-18 12:05:47

品牌	Logo	应用领域
东芝 - TOSHIBA		开关
页数	文件大小	规格书
6页	210K
描述
Consumer Application Voltage Resonance Inverter Switching Application

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GT40T321 技术参数

生命周期：	Not Recommended	包装说明：	FLANGE MOUNT, R-PSFM-T3
针数：	3	Reach Compliance Code：	unknown
风险等级：	5.71	外壳连接：	COLLECTOR
最大集电极电流 (IC)：	40 A	集电极-发射极最大电压：	1500 V
配置：	SINGLE WITH BUILT-IN DIODE	JESD-30 代码：	R-PSFM-T3
元件数量：	1	端子数量：	3
最高工作温度：	175 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	FLANGE MOUNT
极性/信道类型：	N-CHANNEL	认证状态：	Not Qualified
表面贴装：	NO	端子形式：	THROUGH-HOLE
端子位置：	SINGLE	晶体管应用：	POWER CONTROL
晶体管元件材料：	SILICON	标称断开时间 (toff)：	540 ns
标称接通时间 (ton)：	240 ns	Base Number Matches：	1

GT40T321 数据手册

GT40T321

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40T321

Consumer Application

Unit: mm

Voltage Resonance Inverter Switching Application

Sixth Generation IGBT

•

FRD included between emitter and collector

Enhancement mode type

High speed

IGBT: t = 0.24 μs (typ.) (I = 40 A)

f C

FRD: t = 0.7 μs (typ.) (di/dt = −20 A/μs)

•

Low saturation voltage

=2.15 V (typ.) (I = 40 A)

CE (sat) C

High Junction temperature T_j= 175°C (max)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

1500

±25

CES

GES

JEDEC

⎯

1ms

JEITA

Collector current

TOSHIBA

2-16C1C

Diode forward current

Weight: 4.6 g (typ.)

1ms

Collector power dissipation

(Tc = 25°C)

230

Junction temperature

Storage temperature

175

°C

stg

-55 to 175

Note 1: Ensure that the channel temperature does not exceed 175°C during use of the device.

Note 2: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly

even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute

maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor

Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data

(i.e. reliability test report and estimated failure rate, etc).

In general, loss of IGBT increases more when it has positive temperature coefficient and gets higher

temperature. In case that the temperature rise due to loss of IGBT exceeds the heat release capacity of a

device, it leads to thermorunaway and results in destruction. Therefore, please design heat release of a device

with due consideration to the temperature rise of IGBT.

2009-12-04

12 3 4 5 6

中文翻译

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