Datasheet > GT40PI120T5H

GT40PI120T5H

更新时间： 2024-09-14 17:15:35

品牌	Logo	应用领域
银茂微 - SILVERMICRO		双极性晶体管
页数	文件大小	规格书
14页	529K
描述
PIM IGBT-1200V

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

GT40PI120T5H 数据手册

GT40PI120T5H

IGBT Module

Features：



Trench & Field Stop IGBT

Short Circuit Rated>10μs

Low Saturation Voltage

Low Switching Loss

100% RBSOA Tested(2×Ic)

Low Stray Inductance

Lead Free, Compliant with RoHS Requirement

Applications：



Industrial Inverters

Servo Applications

IGBT, Inverter

Maximum Rated Values

V_CES

V_GES

Collector-Emitter Blocking Voltage

T_J=25℃

1200

±20

Gate-Emitter Voltage

T_C= 100℃

T_C= 25℃

tp=1ms

I_C

Continuous Collector Current

I_CM

t_SC

P_D

Peak Collector Current Repetitive

Short Circuit Withstand Time

>10

319

μs

T_C= 25℃

Maximum Power Dissipation per IGBT

_Jmax=175℃

www.njsme.com

Page 1 REV.B

07/07/2022

SYS

12 3 4 5 6 7...14

中文翻译

下载PDF

与GT40PI120T5H相关器件

型号	品牌	获取价格	描述	数据表
GT40Q321	TOSHIBA	获取价格	Voltage Resonance Inverter Switching Application
GT40Q321_06	TOSHIBA	获取价格	Silicon N Channel IEGT Voltage Resonance Inverter Switching Application
GT40Q322	TOSHIBA	获取价格	Voltage Resonance Inverter Switching Application
GT40Q323	TOSHIBA	获取价格	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
GT40Q323_06	TOSHIBA	获取价格	Silicon N Channel IGBT Voltage Resonance Inverter Switching Application
GT40QR21	TOSHIBA	获取价格	Discrete IGBTs Silicon N-Channel IGBT
GT40RR21	TOSHIBA	获取价格	Discrete IGBTs Silicon N-Channel IGBT
GT40T101	TOSHIBA	获取价格	N CHANNEL MOS TYPE (HIGH POWER SWITHCING APPLICATIONS)
GT40T102	TOSHIBA	获取价格	TRANSISTOR 40 A, 1500 V, N-CHANNEL IGBT, 2-21F2C, 3 PIN, Insulated Gate BIP Transistor
GT40T301	TOSHIBA	获取价格	Insulated Gate Bipolar Transistor Silicon N Channel IGBT