Datasheet > GT40Q323_06

GT40Q323_06

更新时间： 2024-11-18 02:52:31

品牌	Logo	应用领域
东芝 - TOSHIBA		开关双极性晶体管
页数	文件大小	规格书
6页	151K
描述
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application

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GT40Q323_06 数据手册

GT40Q323

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT40Q323

Voltage Resonance Inverter Switching Application

Unit: mm

•

Enhancement-mode

High speed: t = 0.14 μs (typ.) (I = 40A)

FRD included between emitter and collector

4th generation

TO-3P (N) (Toshiba package name)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Collector-emitter voltage

Gate-emitter voltage

1200

±25

CES

GES

@ Tc = 100°C

Continuous collector

current

@ Tc = 25°C

Pulsed collector current

Diode forward current

JEDEC

―

Pulsed

JEITA

@ Tc = 100°C

@ Tc = 25°C

Collector power

dissipation

200

150

−55 to 150

TOSHIBA

2-16C1C

Junction temperature

°C

Weight: 4.6 g (typ.)

Storage temperature range

stg

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the

significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even

if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum

ratings.

Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook

(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

Thermal Characteristics

Characteristics

Symbol

Max

Unit

Thermal resistance (IGBT)

Thermal resistance (diode)

0.625

1.79

°C/W

th (j-c)

Equivalent Circuit

Collector

Gate

Emitter

2006-11-01

12 3 4 5 6

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