是否Rohs认证: | 不符合 | 生命周期: | Obsolete |
包装说明: | 2-21F2C, 3 PIN | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.89 |
其他特性: | HIGH SPEED SWITCHING | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 40 A | 集电极-发射极最大电压: | 900 V |
配置: | SINGLE WITH BUILT-IN DIODE | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | 240 | 极性/信道类型: | N-CHANNEL |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 600 ns |
标称接通时间 (ton): | 400 ns | Base Number Matches: | 1 |
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GT40PI120T5H | SILVERMICRO |
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Discrete IGBTs Silicon N-Channel IGBT | |
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TRANSISTOR 40 A, 1500 V, N-CHANNEL IGBT, 2-21F2C, 3 PIN, Insulated Gate BIP Transistor |