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GT40J322 PDF预览

GT40J322

更新时间: 2024-11-09 19:47:51
品牌 Logo 应用领域
东芝 - TOSHIBA 局域网双极性晶体管功率控制
页数 文件大小 规格书
6页 327K
描述
TRANSISTOR 40 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16C1C, 3 PIN, Insulated Gate BIP Transistor

GT40J322 技术参数

生命周期:Active包装说明:FLANGE MOUNT, R-PSFM-T3
针数:3Reach Compliance Code:unknown
风险等级:5.72外壳连接:COLLECTOR
最大集电极电流 (IC):40 A集电极-发射极最大电压:600 V
配置:SINGLE WITH BUILT-IN DIODEJESD-30 代码:R-PSFM-T3
元件数量:1端子数量:3
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:N-CHANNEL认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:POWER CONTROL
晶体管元件材料:SILICON标称断开时间 (toff):700 ns
标称接通时间 (ton):500 nsBase Number Matches:1

GT40J322 数据手册

 浏览型号GT40J322的Datasheet PDF文件第2页浏览型号GT40J322的Datasheet PDF文件第3页浏览型号GT40J322的Datasheet PDF文件第4页浏览型号GT40J322的Datasheet PDF文件第5页浏览型号GT40J322的Datasheet PDF文件第6页 
GT40J322  
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT  
GT40J322  
Current Resonance Inverter Switching Application  
Unit: mm  
FRD included between emitter and collector  
Enhancement mode type  
High-speed IGBT: t = 0.20 μs (typ.) (I = 40 A)  
f
C
Low saturation voltage: V  
= 1.7 V (typ.) (I = 40 A)  
C
CE (sat)  
Absolute Maximum Ratings (Ta = 25°C)  
Characteristics  
Symbol  
Rating  
Unit  
Collector-emitter voltage  
Gate-emitter voltage  
V
V
600  
± 25  
40  
V
V
CES  
GES  
DC  
1ms  
DC  
I
C
Collector current  
A
I
100  
30  
CP  
I
F
Diode forward current  
A
1ms  
I
60  
FP  
JEDEC  
Collector power dissipation  
(Tc = 25°C)  
P
120  
W
JEITA  
C
TOSHIBA  
2-16C1C  
Junction temperature  
Storage temperature  
T
150  
°C  
°C  
j
Weight: 4.6 g (typ.)  
T
stg  
55 to 150  
Note: Using continuously under heavy loads (e.g. the application of high  
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to  
decrease in the reliability significantly even if the operating conditions (i.e. operating  
temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate  
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating  
Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).  
Equivalent Circuit  
Marking  
Collector  
TOSHIBA  
Gate  
40J322  
Part No. (or abbreviation code)  
Lot No.  
Note 1  
Emitter  
1
2009-08-10  

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