生命周期: | Active | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
针数: | 3 | Reach Compliance Code: | unknown |
风险等级: | 5.72 | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 40 A | 集电极-发射极最大电压: | 600 V |
配置: | SINGLE WITH BUILT-IN DIODE | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | N-CHANNEL | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 700 ns |
标称接通时间 (ton): | 500 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
GT40J325 | TOSHIBA |
获取价格 |
TRANSISTOR 40 A, 600 V, N-CHANNEL IGBT, ROHS COMPLIANT, 2-16F1S, TO-3P(N)IS, 3 PIN, Insula | |
GT40M101 | TOSHIBA |
获取价格 |
N CHANNEL IGBT (HIGH POWER SWITCHING APPLICATIONS) | |
GT40M301 | TOSHIBA |
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N CHANNEL TMOS TYPE(HIGH POWER SWITHCING APPLICATIONS) | |
GT40PI120T5H | SILVERMICRO |
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PIM IGBT-1200V | |
GT40Q321 | TOSHIBA |
获取价格 |
Voltage Resonance Inverter Switching Application | |
GT40Q321_06 | TOSHIBA |
获取价格 |
Silicon N Channel IEGT Voltage Resonance Inverter Switching Application | |
GT40Q322 | TOSHIBA |
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Voltage Resonance Inverter Switching Application | |
GT40Q323 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | |
GT40Q323_06 | TOSHIBA |
获取价格 |
Silicon N Channel IGBT Voltage Resonance Inverter Switching Application | |
GT40QR21 | TOSHIBA |
获取价格 |
Discrete IGBTs Silicon N-Channel IGBT |