Datasheet > FZT851

FZT851

更新时间： 2024-09-16 12:33:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管
页数	文件大小	规格书
2页	90K
描述
Extremely low equivalent on-resistance; RCE(sat)44mÃ at 5A, 6 Amps continuous current, up to 20 Amps peak current

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数据手册

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FZT851 数据手册

SMD Type

Product specification

FZT851

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

Extremely low equivalent on-resistance; R^CE(sat)44mÙ at 5A.

6 Amps continuous current, up to 20 Amps peak current.

Very low saturation voltages.

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

Excellent hFE characteristics specified up to 10 Amps.

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

VCBO

V^CEO

V^EBO

I^C

Rating

150

Unit

Collector-emitter voltage

Emitter-base voltage

Peak pulse current

Continuous collector current

Power dissipation

I^CM

P^tot

Operating and storage temperature range

T^j,T^stg

-55 to +150

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sales@twtysemi.com

4008-318-123

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