Datasheet > FZT857_03

FZT857_03

更新时间： 2022-04-23 23:00:11

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
3页	38K
描述
SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR

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FZT857_03 数据手册

SOT223 NPN SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE)TRANSISTOR

FZT857

ISSUE 5 - AUGUST 2003

FEATURES

Up to 3.5 Am ps continuous collector current, up to 5 Am p peak

V_CEO= 300V

Very low saturation voltage

Excellent h_FEspecified up to 3 Am ps

PARTMARKING DETAIL -

COMPLEMENTARY TYPE -

FZT857

FZT957

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

S YMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Co lle cto r-Ba s e Vo lta g e

350

Co lle cto r-Em itte r Vo lta g e

Em itte r-Ba s e Vo lta g e

300

Pe a k Pu ls e Cu rre n t

Co n tin u o u s Co lle cto r Cu rre n t

Po w e r Dis s ip a tio n a t T_{a m b}=25°C

Op e ra tin g a n d S to ra g e Te m p e ra tu re Ra n g e

I_C

3.5

P_{to t}

°C

T_j:T_{s tg}

-55 to +150

*The power which can be dissipated assum ing the device is m ounted in a typical m anner on a

P.C.B. with copper equal to 2 inches square.

12 3

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