Datasheet > FZT851D

FZT851D

更新时间： 2024-04-09 19:01:10

品牌	Logo	应用领域
银河微电 - BL Galaxy Electrical		/
页数	文件大小	规格书
5页	459K
描述
60V,6A,General Purpose PNP Bipolar Transistor

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FZT851D 数据手册

NPN Silicon Epitaxial Planar Transistor

FZT851D

Features



Epitaxial planar die construction

High continuous collector current

Low saturation voltage V_CE(SAT)

Mechanic al Data



Case: TO-252

Molding Compound: UL Flammability Classification Rating 94V-0

TO-252

Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208

Ordering Information

Part Number

Package

Shipping Quantity

Marking Code

FZT851D

SOT-223

80 pcs / Tube or 2500 pcs / Tape & Reel

FZT851D

Maximum Ratings (@ T_A= 25℃ unless otherwise specified)

Parameter

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Current (Continuous)

Collector Current (Pulse)

Symbol

V_CBO

V_CEO

V_EBO

I_C

Value

150

Unit

I_CM

Thermal Characteristics

Parameter

Power Dissipation

Symbol

P_D

Value

2.5

Unit

Thermal Resistance (Junction-to-Ambient) ^*1

Thermal Resistance (Junction-to-Case) ^*1

Thermal Resistance (Junction-to-Lead) ^*1

Junction Temperature

R_θJA

R_θJC

R_θJL

C/W

°C

T_J

-55 ~ +150

Storage Temperature Range

T_STG

°C

Note 1: The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper

STM0799A: October 2023 [2.0]

www.gmesemi.com

12 3 4 5

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