FZT869

更新时间： 2024-11-23 10:22:59

品牌	Logo	应用领域
美台 - DIODES		局域网
页数	文件大小	规格书
2页	32K
描述
SOT223 NPN SILICON PLANAR HIGH CURRENT

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FZT869 数据手册

SOT223 NPN SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE) TRANSISTOR

ISSUE 2 - JANUARY 1996

FZT869

FEATURES

Extremely low equivalent on-resistance; R_CE(sat)36mΩ at 5A

7 Amp continuous collector current (20 Amp peak)

Very low saturation voltages

Excellent gain charateristics specified upto 20 Amp

P_tot=3 Watts

PARTMARKING DETAILS -

FZT869

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

P_tot

°C

T_j:T_stg

-55 to +150

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 4 inch square minimum

3 - 271

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型号	品牌	获取价格	描述	数据表
FZT869TA	DIODES	获取价格	SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
FZT948	DIODES	获取价格	SOT223 PNP SILICON PLANAR HIGH CURRENT
FZT948	ZETEX	获取价格	PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
FZT948TA	DIODES	获取价格	SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
FZT948TA	ZETEX	获取价格	Power Bipolar Transistor, 6A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
FZT948TC	DIODES	获取价格	Power Bipolar Transistor, 6A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
FZT948TC	ZETEX	获取价格	Power Bipolar Transistor, 6A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4
FZT949	ZETEX	获取价格	PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS
FZT949	DIODES	获取价格	SOT223 PNP SILICON PLANAR HIGH CURRENT
FZT949	KEXIN	获取价格	PNP Silicon Planar High Current (High Performance) Transistor