是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | HTS代码: | 8541.29.00.75 |
Factory Lead Time: | 15 weeks | 风险等级: | 0.87 |
外壳连接: | COLLECTOR | 最大集电极电流 (IC): | 3.5 A |
集电极-发射极最大电压: | 300 V | 配置: | SINGLE |
最小直流电流增益 (hFE): | 100 | JESD-30 代码: | R-PDSO-G4 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 4 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | NPN | 认证状态: | Not Qualified |
表面贴装: | YES | 端子面层: | Matte Tin (Sn) |
端子形式: | GULL WING | 端子位置: | DUAL |
处于峰值回流温度下的最长时间: | 40 | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | 标称过渡频率 (fT): | 80 MHz |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FZT857 | DIODES |
类似代替 |
SOT223 NPN SILICON PLANAR HIGH CURRENT | |
ZTX857STZ | DIODES |
功能相似 |
Power Bipolar Transistor, 3A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, | |
ZTX857 | DIODES |
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NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR |
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FZT857TC | DIODES |
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Power Bipolar Transistor, 3.5A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy | |
FZT869 | TYSEMI |
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NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR | |
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SOT223 NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR | |
FZT948 | DIODES |
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SOT223 PNP SILICON PLANAR HIGH CURRENT | |
FZT948 | ZETEX |
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PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | |
FZT948TA | DIODES |
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SOT223 PNP SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTORS | |
FZT948TA | ZETEX |
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Power Bipolar Transistor, 6A I(C), 20V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 |