FZT851Q

更新时间： 2024-11-24 13:45:39

品牌	Logo	应用领域
美台 - DIODES		晶体管功率双极晶体管
页数	文件大小	规格书
3页	57K
描述
NPN, 60V, 6A, SOT223

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FZT851Q 数据手册

SOT223 NPN SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE) TRANSISTORS

FZT851

FZT853

ISSUE 2 - OCTOBER 1995

FEATURES

Extremely low equivalent on-resistance; R_CE(sat)44mΩ at 5A

6 Amps continuous current, up to 20 Amps peak current

Very low saturation voltages

Excellent h_FEcharacteristics specified up to 10 Amps

PARTMARKING DETAILS -

DEVICE TYPE IN FULL

COMPLEMENTARY TYPES - FZT851

FZT853

FZT951

FZT953

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

FZT851

150

FZT853

200

100

UNIT

Collector-Base Voltage

V_CBO

V_CEO

V_EBO

I_CM

Collector-Emitter Voltage

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

I_C

P_tot

°C

Operating and Storage Temperature

Range

T_j:T_stg

-55 to +150

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 4 square inch minimum

3 - 260

12 3

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