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FZT948 PDF预览

FZT948

更新时间: 2024-11-23 10:22:59
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率双极晶体管开关光电二极管局域网
页数 文件大小 规格书
5页 219K
描述
SOT223 PNP SILICON PLANAR HIGH CURRENT

FZT948 技术参数

生命周期:Obsolete零件包装代码:SOT-223
包装说明:SMALL OUTLINE, R-PDSO-G4针数:4
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:5.19
Is Samacsys:N外壳连接:COLLECTOR
最大集电极电流 (IC):6 A集电极-发射极最大电压:20 V
配置:SINGLE最小直流电流增益 (hFE):100
JESD-30 代码:R-PDSO-G4JESD-609代码:e3
湿度敏感等级:1元件数量:1
端子数量:4最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:PNP认证状态:Not Qualified
表面贴装:YES端子面层:MATTE TIN
端子形式:GULL WING端子位置:DUAL
处于峰值回流温度下的最长时间:40晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):80 MHz
Base Number Matches:1

FZT948 数据手册

 浏览型号FZT948的Datasheet PDF文件第2页浏览型号FZT948的Datasheet PDF文件第3页浏览型号FZT948的Datasheet PDF文件第4页浏览型号FZT948的Datasheet PDF文件第5页 
SOT223 PNP SILICON PLANAR HIGH CURRENT  
(HIGH PERFORMANCE) TRANSISTORS  
FZT948  
FZT949  
ISSUE 2 - NOVEMBER 1995  
FEATURES  
*
*
*
*
*
Extremely low equivalent on-resistance; RCE(sat)  
6 Amps continuous current  
Up to 20 Amps peak current  
Very low saturation voltage  
Excellent hFE characteristics specified upto 20 Amps  
C
E
C
B
PARTMARKING DETAILS — DEVICE TYPE IN FULL  
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
FZT948  
-40  
FZT949  
-50  
UNIT  
V
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Peak Pulse Current  
-20  
-30  
V
-6  
V
-20  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
IC  
-6  
-5.5  
A
Ptot  
3
W
°C  
Operating and Storage Temperature  
Range  
Tj:Tstg  
-55 to +150  
*The power which can be dissipated assuming the device is mounted in a typical manner on a  
P.C.B. with copper equal to 4 square inch minimum  
TBA  

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