FZT855

更新时间： 2024-02-03 23:40:38

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管功率双极晶体管开关光电二极管局域网
页数	文件大小	规格书
3页	169K
描述
NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE)TRANSISTOR

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技术参数
数据手册

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FZT855 技术参数

是否Rohs认证：	符合	生命周期：	Active
Reach Compliance Code：	compliant	风险等级：	5.8

FZT855 数据手册

SOT223 NPN SILICON PLANAR HIGH CURRENT

(HIGH PERFORMANCE)TRANSISTOR

FZT855

ISSUE 4 - NOVEMBER 2001

✪

FEATURES

Up to 5 Amps continuous collector current, up to 10 Amp peak

Very low saturation voltage

Excellent h_FEspecified up to 10 Amps

PARTMARKING DETAIL -

COMPLEMENTARY TYPE -

FZT855

FZT955

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

250

Collector-Emitter Voltage

Emitter-Base Voltage

150

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

P_tot

°C

T_j:T_stg

-55 to +150

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 4 inch square minimum

12 3

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