Datasheet > FZT857

FZT857

更新时间： 2024-11-26 07:00:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	41K
描述
NPN Silicon Planar High Current Transistor

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中文翻译

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数据手册

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FZT857 数据手册

SMD Type

Transistors

NPN Silicon Planar High Current Transistor

FZT857

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

Up to 3.5 Amps continuous collector current, up to 5 Amp peak

VCEO = 300V

Very low saturation voltage

1 Base

Excellent hFE specified up to 3 Amps

2 Collector

3 Emitter

4 Collector

+0.1

0.70

-0.1

2.9

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-Base Voltage

Symbol

V^CBO

V^CEO

V^EBO

I^CM

Rating

Unit

350

Collector-Emitter Voltage

300

Emitter-Base Voltage

Peak Pulse Current

Continuous Collector Current

Power Dissipation at T^amb=25

Operating and Storage Temperature Range

I^C

3.5

Ptot

T^j:Tstg

-55 to +150

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