Datasheet > FZT869

FZT869

更新时间： 2024-11-23 07:00:51

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管
页数	文件大小	规格书
2页	39K
描述
NPN Silicon Planar High Current (High Performance) Transistor

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中文翻译

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数据手册

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FZT869 数据手册

SMD Type

Transistors

NPN Silicon Planar High Current

(High Performance) Transistor

FZT869

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

-0.2

6.50

Features

Extremely low equivalent on-resistance; RCE(sat)44mÙ at 5A.

7 Amp continuous collector current (20 Amp peak).

Very low saturation voltages.

+0.2

0.90

-0.2

+0.1

-0.1

3.00

+0.3

7.00

-0.3

Excellent gain charateristics specified upto 20 Amp.

Ptot = 3 Watts.

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Peak pulse current

Continuous collector current

Power dissipation

ICM

Ptot

Operating and storage temperature range

T^j,Tstg

-55 to +150

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