Datasheet > FZT788B

FZT788B

更新时间： 2024-11-09 12:33:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	161K
描述
Low equivalent on-resistance; RCE(sat) 93mÃ at 3A, Gain of 300 at IC=2 Amps and Very low saturation voltage

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FZT788B 数据手册

SMD Type

Transistors

Product specification

FZT788B

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

6.50

-0.2

Features

Low equivalent on-resistance; R^CE(sat)93mÙ at 3A.

Gain of 300 at IC=2 Amps and Very low saturation voltage.

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

-15

-5

Unit

V^CBO

V^CEO

V^EBO

I^CM

Collector-emitter voltage

Emitter-base voltage

Continuous collector current

-8

Peak pulse current

I^C

-3

Power dissipation

P^tot

Operating and storage temperature range

T^j,T^stg

-55 to +150

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