FZT789A-PNP

更新时间： 2024-11-24 22:06:27

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
2页	85K
描述
PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

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FZT789A-PNP 数据手册

SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 OCTOBER 1995

FZT789A

FEATURES

Extremely low equivalent on-resistance; R_CE(sat)93mΩ at 3A

Gain of 200 at I_C=2 Amps and very low saturation voltage

APPLICATIONS

Battery powered circuits, fast charge converters

COMPLEMENTARY TYPE -

PARTMARKING DETAIL -

FZT689B

FZT789A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-25

Collector-Emitter Voltage

Emitter-Base Voltage

-25

-5

Peak Pulse Current

-6

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

-3

P_tot

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C)

amb

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

PARAMETER

Breakdown Voltages

V_(BR)CBO-25 -40

V_(BR)CEO-25 -35

I_C=-100µA

I_C=-10mA*

I_E=-100µA

V_(BR)EBO-5

I_CBO

-8.5

Collector Cut-Off Current

-0.1

V_CB=-15V

V_CB=-15V, T_amb=100°C

µA

Emitter Cut-Off Current

Saturation Voltages

I_EBO

-0.1

V_EB=-4V

µA

V_CE(sat)

-0.15 -0.25

-0.30 -0.45

-0.30 -0.50

I_C=-1A, I_B=-10mA*

I_C=-2A, I_B=-20mA*

I_C=-3A, I_B=-100mA*

V_BE(sat)

V_BE(on)

-0.8 -1.0

-0.8

I_C=-1A, I_B=-10mA*

I_C=-1A, V_CE=-2V*

Base-Emitter

Turn-On Voltage

Static Forward Current

Transfer Ratio

h_FE

300

800

I_C=-10mA, V_CE=-2V

I_C=-1A, V_CE=-2V*

I_C=-2A, V_CE=-2V*

I_C=-6A, V_CE=-2V*

250

200

100

Transition Frequency

Input Capacitance

Output Capacitance

Switching Times

f_T

100

MHz I_C=-50mA, V_CE=-5V, f=50MHz

C_ibo

C_obo

225

V_EB=-0.5V, f=1MHz

V_CB=-10V, f=1MHz

I_C=-500mA, I_B1=-50mA

t_on

t_off

400

I_B2=-50mA, V_CC=-10V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 246

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