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FZT790A_NL

更新时间: 2024-11-06 12:59:23
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关光电二极管
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2页 47K
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FZT790A_NL 数据手册

 浏览型号FZT790A_NL的Datasheet PDF文件第2页 
Discrete Power & Signal  
Technologies  
July 1998  
FZT790A  
C
E
C
B
SOT-223  
PNP Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT790A  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Units  
Collector-Emitter Voltage  
40  
V
Collector-Base Voltage  
Emitter-Base Voltage  
50  
V
V
5
Collector Current - Continuous  
3
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT790A  
Total Device Dissipation  
2
W
PD  
Thermal Resistance, Junction to Ambient  
62.5  
°C/W  
RqJA  
ã
1998 Fairchild Semiconductor Corporation  
Page 1 of 2  
fzt790a.lwpPrPA 7/10/98 revB  

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