Datasheet > FZT849

FZT849

更新时间： 2024-09-16 12:33:39

品牌	Logo	应用领域
TYSEMI		晶体晶体管光电二极管 PC
页数	文件大小	规格书
2页	91K
描述
Extremely low equivalent on-resistance; RCE(sat)36mÃ at 5A, Very low saturation voltages.

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FZT849 数据手册

Product specification

FZT849

SOT-223

Unit: mm

+0.2

3.50

-0.2

Features

+0.2

6.50

-0.2

Extremely low equivalent on-resistance; R^CE(sat)36mÙ at 5A.

7 Amp continuous collector current (20 Amp peak).

Very low saturation voltages.

+0.2

0.90

-0.2

+0.1

3.00

-0.1

+0.3

7.00

-0.3

Excellent gain charateristics specified upto 20 Amp.

P^tot= 3 Watts.

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

V^CBO

V^CEO

V^EBO

I^C

Rating

Unit

Collector-emitter voltage

Emitter-base voltage

Peak pulse current

Continuous collector current

Power dissipation

I^CM

P^tot

Operating and storage temperature range

T^j,T^stg

-55 to +150

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