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FZT792 PDF预览

FZT792

更新时间: 2024-11-24 22:06:27
品牌 Logo 应用领域
捷特科 - ZETEX 晶体晶体管局域网
页数 文件大小 规格书
3页 79K
描述
PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

FZT792 数据手册

 浏览型号FZT792的Datasheet PDF文件第2页浏览型号FZT792的Datasheet PDF文件第3页 
SOT223 PNP SILICON PLANAR HIGH GAIN  
MEDIUM POWER TRANSISTOR  
ISSUE 3 - NOVEMBER 1995  
FZT792A  
FEATURES  
*
High gain and Very low saturation voltage  
C
APPLICATIONS  
Battery powered circuits  
*
E
C
COMPLEMENTARY TYPE -  
PARTMARKING DETAIL -  
FZT692B  
FZT792A  
B
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-75  
Collector-Emitter Voltage  
-70  
V
Emitter-Base Voltage  
-5  
V
Peak Pulse Current  
-5  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
-2  
2
A
Ptot  
W
°C  
Tj:Tstg  
= 25°C)  
-55 to +150  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Breakdown Voltages  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-75  
-70  
-5  
-100  
-90  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
-8.5  
Cut-Off Currents  
-0.1  
-10  
V
CB=-40V  
VCB=-40V,  
amb=100°C  
µA  
µA  
T
IEBO  
-0.1  
VEB=-4V  
µA  
Saturation Voltages  
VCE(sat)  
-0.30 -0.45  
-0.30 -0.50  
-0.30 -0.50  
V
V
V
IC=-500mA, IB=-5mA*  
IC=-1A, IB=-25mA*  
IC=-2A, IB=-200mA*  
VBE(sat)  
-0.80 -0.95  
V
IC=-1A, IB=-25mA*  
3 - 250  

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