FZT795AQ

更新时间： 2024-11-20 13:45:39

品牌	Logo	应用领域
美台 - DIODES		晶体管功率双极晶体管
页数	文件大小	规格书
2页	88K
描述
PNP, 140V, 0.5A, SOT223

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数据手册

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FZT795AQ 数据手册

SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FZT795A

FEATURES

140 Volt V_CEO

Gain of 250 at I_C=0.2 Amps and very low V_CE(sat)

APPLICATIONS

Battery powered circuits

COMPLEMENTARY TYPE FZT694B

PARTMARKING DETAIL FZT795A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-140

Collector-Emitter Voltage

Emitter-Base Voltage

-140

-5

Peak Pulse Current

-1

-500

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

°C

P_tot

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C)

amb

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Breakdown Voltages

V_(BR)CBO-140

V_(BR)CEO-140

V_(BR)EBO-5

I_CBO

I_C=-100µA

I_C=-10mA*

I_E=-100µA

V_CB=-100V

V_EB=-4V

Cut-Off Currents

-0.1

µA

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.3

-0.25

I_C=-100mA, I_B=-1mA*

I_C=-200mA, I_B=-5mA*

I_C=-500mA, I_B=-50mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

-0.95

I_C=-500mA, I_B=-50mA*

Base-Emitter

Turn-On Voltage

-0.75

I_C=-500mA, V_CE=-2V*

Static Forward Current

Transfer Ratio

300

250

100

800

I_C=-10mA, V_CE=-2V*

I_C=-200mA, V_CE=-2V*

I_C=-300mA, V_CE=-2V*

Transition Frequency

f_T

100

MHz I_C=-50mA, V_CE=-5V

f=50MHz

Input Capacitance

Output Capacitance

Switching Times

C_ibo

225

V_EB=-0.5V, f=1MHz

V_CB=-10V, f=1MHz

C_obo

t_on

t_off

100

1900

I_C=-100mA, I_B1=-10mA

I_B2=-10mA, V_CC=-50V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 253

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