FZT795AQ

更新时间： 2024-09-17 13:45:39

品牌	Logo	应用领域
美台 - DIODES		晶体管功率双极晶体管
页数	文件大小	规格书
2页	88K
描述
PNP, 140V, 0.5A, SOT223

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FZT795AQ 数据手册

SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FZT795A

FEATURES

140 Volt V_CEO

Gain of 250 at I_C=0.2 Amps and very low V_CE(sat)

APPLICATIONS

Battery powered circuits

COMPLEMENTARY TYPE FZT694B

PARTMARKING DETAIL FZT795A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-140

Collector-Emitter Voltage

Emitter-Base Voltage

-140

-5

Peak Pulse Current

-1

-500

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

°C

P_tot

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C)

amb

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Breakdown Voltages

V_(BR)CBO-140

V_(BR)CEO-140

V_(BR)EBO-5

I_CBO

I_C=-100µA

I_C=-10mA*

I_E=-100µA

V_CB=-100V

V_EB=-4V

Cut-Off Currents

-0.1

µA

I_EBO

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.3

-0.25

I_C=-100mA, I_B=-1mA*

I_C=-200mA, I_B=-5mA*

I_C=-500mA, I_B=-50mA*

Base-Emitter

Saturation Voltage

V_BE(sat)

V_BE(on)

h_FE

-0.95

I_C=-500mA, I_B=-50mA*

Base-Emitter

Turn-On Voltage

-0.75

I_C=-500mA, V_CE=-2V*

Static Forward Current

Transfer Ratio

300

250

100

800

I_C=-10mA, V_CE=-2V*

I_C=-200mA, V_CE=-2V*

I_C=-300mA, V_CE=-2V*

Transition Frequency

f_T

100

MHz I_C=-50mA, V_CE=-5V

f=50MHz

Input Capacitance

Output Capacitance

Switching Times

C_ibo

225

V_EB=-0.5V, f=1MHz

V_CB=-10V, f=1MHz

C_obo

t_on

t_off

100

1900

I_C=-100mA, I_B1=-10mA

I_B2=-10mA, V_CC=-50V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 253

中文翻译

下载PDF

与FZT795AQ相关器件

型号	品牌	获取价格	描述	数据表
FZT795ATC	DIODES	获取价格	Power Bipolar Transistor, 0.5A I(C), 140V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
FZT796	ZETEX	获取价格	PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT796A	ZETEX	获取价格	PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR
FZT796A	DIODES	获取价格	SOT223 PNP SILICON PLANAR MEDIUM
FZT796ATA	ZETEX	获取价格	Power Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy
FZT796ATC	DIODES	获取价格	暂无描述
FZT849	ZETEX	获取价格	NPN SILICON PLANAR HIGH CURRENT (HIGH PERFORMANCE) TRANSISTOR
FZT849	DIODES	获取价格	SOT223 NPN SILICON PLANAR HIGH CURRENT
FZT849	TYSEMI	获取价格	Extremely low equivalent on-resistance; RCE(s
FZT849	KEXIN	获取价格	NPN Silicon Planar High Current (High Performance) Transistor