FZT796ATC

更新时间： 2024-11-06 13:07:55

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美台 - DIODES		晶体晶体管功率双极晶体管开关光电二极管局域网
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数据手册

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FZT796ATC 数据手册

SOT223 PNP SILICON PLANAR MEDIUM

POWER HIGH GAIN TRANSISTOR

ISSUE 3 - OCTOBER 1995

FZT796A

FEATURES

200 Volt V_CEO

Gain of 250 at I_C=0.3 Amps

Very low saturation voltage

APPLICATIONS

Battery powered circuits

COMPLEMENTARY TYPE -

PARTMARKING DETAIL -

FZT696B

FZT796A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-200

Collector-Emitter Voltage

Emitter-Base Voltage

-200

-5

Peak Pulse Current

-1

-0.5

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

I_C

P_tot

°C

T_j:T_stg

-55 to +150

ELECTRICAL CHARACTERISTICS (at T

= 25°C)

amb

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Breakdown Voltage

Collector-Base

Collector-Emitter

V_(BR)CBO-200

V_(BR)CEO-200

I_C=-100µA

I_C=-10mA*

Emitter-Base

V_(BR)EBO-5

I_CBO

I_E=-100µA

Collector Cut-Off Current

Emitter Cut-Off Current

-0.1

V_CB=-150V

µA

I_EBO

V_EB=-4V

Collector-Emitter

Saturation Voltage

V_CE(sat)

-0.2

-0.3

I_C=-50mA, I_B=-2mA*

I_C=-100mA, I_B=-5mA*

I_C=-200mA, I_B=-20mA*

I_C=-200mA,I_B=-20mA*

I_C=-200mA,V_CE=-10V*

Base-EmitterSaturationVoltage V_BE(sat)

-0.95

Base-EmitterTurn-OnVoltage

V_BE(on)

h_FE

-0.67

Static Forward Current

Transfer Ratio

300

250

100

800

I_C=-10mA, V_CE=-10V*

I_C=-100mA, V_CE=-10V*

I_C=-300mA, V_CE=-10V*

I_C=-400mA, V_CE=-10V*

Transition Frequency

f_T

100

MHz I_C=-50mA, V_CE=-5V

f=50MHz

Input Capacitance

Output Capacitance

Switching Times

C_ibo

225

V_EB=-0.5V, f=1MHz

V_CB=-10V, f=1MHz

C_obo

t_on

t_off

100

3200

I_C=-100mA, I_B1=-10mA

I_B2=-10mA, V_CC=-50V

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%

Spice parameter data is available upon request for this device

3 - 255

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