FZT792A

更新时间： 2024-11-08 22:06:27

品牌	Logo	应用领域
捷特科 - ZETEX		晶体晶体管局域网
页数	文件大小	规格书
3页	79K
描述
PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR

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FZT792A 数据手册

SOT223 PNP SILICON PLANAR HIGH GAIN

MEDIUM POWER TRANSISTOR

ISSUE 3 - NOVEMBER 1995

FZT792A

FEATURES

High gain and Very low saturation voltage

APPLICATIONS

Battery powered circuits

COMPLEMENTARY TYPE -

PARTMARKING DETAIL -

FZT692B

FZT792A

ABSOLUTE MAXIMUM RATINGS

PARAMETER

SYMBOL

V_CBO

V_CEO

V_EBO

I_CM

VALUE

UNIT

Collector-Base Voltage

-75

Collector-Emitter Voltage

-70

Emitter-Base Voltage

-5

Peak Pulse Current

-5

Continuous Collector Current

Power Dissipation at T_amb=25°C

Operating and Storage Temperature Range

ELECTRICAL CHARACTERISTICS (at T

I_C

-2

P_tot

°C

T_j:T_stg

= 25°C)

-55 to +150

amb

PARAMETER

SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Breakdown Voltages

V_(BR)CBO

V_(BR)CEO

V_(BR)EBO

I_CBO

-75

-70

-5

-100

-90

I_C=-100µA

I_C=-10mA*

I_E=-100µA

-8.5

Cut-Off Currents

-0.1

-10

_CB=-40V

V_CB=-40V,

_amb=100°C

µA

I_EBO

-0.1

V_EB=-4V

µA

Saturation Voltages

V_CE(sat)

-0.30 -0.45

-0.30 -0.50

I_C=-500mA, I_B=-5mA*

I_C=-1A, I_B=-25mA*

I_C=-2A, I_B=-200mA*

V_BE(sat)

-0.80 -0.95

I_C=-1A, I_B=-25mA*

3 - 250

12 3

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