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FZT792A PDF预览

FZT792A

更新时间: 2024-11-25 10:22:59
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页数 文件大小 规格书
3页 80K
描述
SOT223 PNP SILICON PLANAR HIGH GAIN

FZT792A 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:Obsolete零件包装代码:SOT-223
包装说明:SOT-223, 4 PIN针数:4
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.75风险等级:7
Base Number Matches:1

FZT792A 数据手册

 浏览型号FZT792A的Datasheet PDF文件第2页浏览型号FZT792A的Datasheet PDF文件第3页 
SOT223 PNP SILICON PLANAR HIGH GAIN  
MEDIUM POWER TRANSISTOR  
ISSUE 3 - NOVEMBER 1995  
FZT792A  
FEATURES  
*
High gain and Very low saturation voltage  
C
APPLICATIONS  
Battery powered circuits  
*
E
C
COMPLEMENTARY TYPE -  
PARTMARKING DETAIL -  
FZT692B  
FZT792A  
B
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-75  
Collector-Emitter Voltage  
-70  
V
Emitter-Base Voltage  
-5  
V
Peak Pulse Current  
-5  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
-2  
2
A
Ptot  
W
°C  
Tj:Tstg  
= 25°C)  
-55 to +150  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Breakdown Voltages  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
-75  
-70  
-5  
-100  
-90  
V
V
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
-8.5  
Cut-Off Currents  
-0.1  
-10  
V
CB=-40V  
VCB=-40V,  
amb=100°C  
µA  
µA  
T
IEBO  
-0.1  
VEB=-4V  
µA  
Saturation Voltages  
VCE(sat)  
-0.30 -0.45  
-0.30 -0.50  
-0.30 -0.50  
V
V
V
IC=-500mA, IB=-5mA*  
IC=-1A, IB=-25mA*  
IC=-2A, IB=-200mA*  
VBE(sat)  
-0.80 -0.95  
V
IC=-1A, IB=-25mA*  
3 - 250  

FZT792A 替代型号

型号 品牌 替代类型 描述 数据表
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