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NZT751 PDF预览

NZT751

更新时间: 2024-10-29 22:06:27
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体驱动器晶体管开关光电二极管PC
页数 文件大小 规格书
3页 102K
描述
PNP Current Driver Transistor

NZT751 数据手册

 浏览型号NZT751的Datasheet PDF文件第2页浏览型号NZT751的Datasheet PDF文件第3页 
Discrete POWER & Signal  
Technologies  
NZT751  
C
E
C
B
SOT-223  
PNP Current Driver Transistor  
This device is designed for power amplifier, regulator and switching  
circuits where speed is important. Sourced from Process 5P.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Value  
Units  
VCEO  
VCBO  
VEBO  
IC  
Collector-Emitter Voltage  
60  
80  
V
V
Collector-Base Voltage  
Emitter-Base Voltage  
5.0  
V
Collector Current - Continuous  
Operating and Storage Junction Temperature Range  
4.0  
A
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150 degrees C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Characteristic  
Max  
Units  
*NZT751  
PD  
Total Device Dissipation  
Derate above 25°C  
Thermal Resistance, Junction to Ambient  
1.2  
9.7  
103  
W
mW/°C  
°C/W  
Rθ  
JA  
*Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm2.  
1997 Fairchild Semiconductor Corporation  

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