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FZT788BTA PDF预览

FZT788BTA

更新时间: 2024-11-25 11:55:47
品牌 Logo 应用领域
美台 - DIODES 晶体晶体管功率双极晶体管开关光电二极管PC局域网
页数 文件大小 规格书
2页 84K
描述
SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR

FZT788BTA 技术参数

是否无铅: 含铅是否Rohs认证: 符合
生命周期:ActiveReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.29.00.75
风险等级:0.77Samacsys Confidence:4
Samacsys Status:ReleasedSamacsys PartID:441233
Samacsys Pin Count:4Samacsys Part Category:Transistor
Samacsys Package Category:SOT223 (3-Pin)Samacsys Footprint Name:SOT223 (AP02002)
Samacsys Released Date:2017-04-27 09:34:42Is Samacsys:N
外壳连接:COLLECTOR最大集电极电流 (IC):3 A
集电极-发射极最大电压:15 V配置:SINGLE
最小直流电流增益 (hFE):150JESD-30 代码:R-PDSO-G4
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:4
最高工作温度:150 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:SMALL OUTLINE
峰值回流温度(摄氏度):260极性/信道类型:PNP
最大功率耗散 (Abs):2 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:DUAL处于峰值回流温度下的最长时间:40
晶体管应用:SWITCHING晶体管元件材料:SILICON
标称过渡频率 (fT):100 MHzBase Number Matches:1

FZT788BTA 数据手册

 浏览型号FZT788BTA的Datasheet PDF文件第2页 
SOT223 PNP SILICON PLANAR MEDIUM  
POWER HIGH GAIN TRANSISTOR  
ISSUE 3 - OCTOBER 1995  
FZT788B  
FEATURES  
C
*
*
Low equivalent on-resistance; RCE(sat) 93mat 3A  
Gain of 300 at IC=2 Amps and Very low saturation voltage  
E
APPLICATIONS  
Battery powered circuits  
*
C
COMPLEMENTAY TYPE – FZT688B  
PARTMARKING DETAIL – FZT788B  
B
ABSOLUTE MAXIMUM RATINGS.  
PARAMETER  
SYMBOL  
VCBO  
VCEO  
VEBO  
ICM  
VALUE  
UNIT  
V
Collector-Base Voltage  
-15  
Collector-Emitter Voltage  
-15  
V
Emitter-Base Voltage  
-5  
V
Peak Pulse Current  
-8  
A
Continuous Collector Current  
Power Dissipation at Tamb=25°C  
Operating and Storage Temperature Range  
ELECTRICAL CHARACTERISTICS (at T  
IC  
-3  
2
A
Ptot  
W
°C  
Tj:Tstg  
= 25°C)  
-55 to +150  
amb  
PARAMETER  
SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.  
Collector-Base Breakdown Voltage V(BR)CBO -15  
Collector-Emitter Breakdown Voltage V(BR)CEO -15  
V
IC=-100µA  
IC=-10mA*  
IE=-100µA  
V
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Emitter Cut-Off Current  
V(BR)EBO -5  
ICBO  
V
-0.1  
-0.1  
VCB=-10V  
µA  
µA  
IEBO  
VEB=-4V  
Collector-Emitter Saturation  
Voltage  
VCE(sat)  
-0.15  
-0.25  
-0.45  
-0.5  
V
V
V
IC=-0.5A, IB=-2.5mA*  
IC=-1A, IB=-5mA*  
IC=-2A, IB=-10mA*  
IC=-3A, IB=-50mA*  
Base-Emitter  
Saturation Voltage  
VBE(sat)  
-0.9  
V
V
IC=-1A, IB=-5mA*  
Base-Emitter Turn-On Voltage  
VBE(on)  
hFE  
-0.75  
IC=-1A, VCE=-2V*  
Static Forward Current Transfer  
Ratio  
500  
1500  
IC=-10mA, VCE=-2V*  
IC=-1A, VCE=-2V*  
IC=-2A, VCE=-2V*  
IC=-6A, VCE=-2V*  
400  
300  
150  
Transition Frequency  
fT  
100  
MHz  
IC=-50mA, VCE=-5V  
f=50MHz  
Input Capacitance  
Output Capacitance  
Switching Times  
Cibo  
225  
25  
pF  
pF  
VEB=-0.5V, f=1MHz  
VCB=-10V, f=1MHz  
Cobo  
ton  
toff  
35  
400  
ns  
ns  
IC=-500mA, IB1=-50mA  
IB2=-50mA, VCC=-10V  
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle 2%  
Spice parameter data is available upon request for this device  
3 - 244  

FZT788BTA 替代型号

型号 品牌 替代类型 描述 数据表
DPLS315E-13 DIODES

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LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR
FZT788B DIODES

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