Datasheet > FZT789A

FZT789A

更新时间： 2024-09-16 10:22:59

品牌	Logo	应用领域
科信 - KEXIN		晶体晶体管开关光电二极管
页数	文件大小	规格书
2页	39K
描述
NPN Silicon Planar Medium Power High Gain Transistor

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中文翻译

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数据手册

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FZT789A 数据手册

SMD Type

Transistors

NPN Silicon Planar Medium

Power High Gain Transistor

FZT789A

SOT-223

Unit: mm

+0.2

3.50

-0.2

+0.2

-0.2

6.50

Features

+0.2

0.90

-0.2

Low equivalent on-resistance; RCE(sat) 93mÙ at 3A.

Gain of 300 at IC=2 Amps and Very low saturation voltage.

+0.1

-0.1

3.00

+0.3

7.00

-0.3

1 base

+0.1

0.70

-0.1

2.9

2 collector

3 emitter

4.6

Absolute Maximum Ratings Ta = 25

Parameter

Collector-base voltage

Symbol

Rating

-25

-5

Unit

V^CBO

V^CEO

V^EBO

I^CM

Collector-emitter voltage

Emitter-base voltage

Continuous collector current

-6

Peak pulse current

-3

Power dissipation

Ptot

Operating and storage temperature range

T^j,Tstg

-55 to +150

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