是否Rohs认证: | 符合 | 生命周期: | Active |
包装说明: | FLANGE MOUNT, R-XUFM-X9 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.56 |
外壳连接: | ISOLATED | 最大集电极电流 (IC): | 3550 A |
集电极-发射极最大电压: | 1200 V | 配置: | COMPLEX |
JESD-30 代码: | R-XUFM-X9 | 湿度敏感等级: | 1 |
元件数量: | 3 | 端子数量: | 9 |
封装主体材料: | UNSPECIFIED | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 峰值回流温度(摄氏度): | NOT SPECIFIED |
极性/信道类型: | N-CHANNEL | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 1440 ns |
标称接通时间 (ton): | 880 ns | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZ2400R12HP4B9NPSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 3550A I(C), 1200V V(BR)CES, N-Channel, MODULE-9 | |
FZ2400R12KE3 | EUPEC |
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IGBT-modules | |
FZ2400R12KE3_B9 | EUPEC |
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IGBT-modules | |
FZ2400R12KE3B9NOSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, 3200A I(C), 1200V V(BR)CES, N-Channel, MODULE-9 | |
FZ2400R12KL4C | ETC |
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IGBT Module | |
FZ2400R17HE4_B9 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FZ2400R17HE4B9HOSA2 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9 | |
FZ2400R17HE4B9NPSA1 | INFINEON |
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Insulated Gate Bipolar Transistor, | |
FZ2400R17HE4P_B9 | INFINEON |
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TIM | |
FZ2400R17HE4PB9HPSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9 |