Datasheet > FZ2400R12KE3

FZ2400R12KE3

更新时间： 2024-09-13 10:28:27

品牌	Logo	应用领域
EUPEC		双极性晶体管
页数	文件大小	规格书
8页	256K
描述
IGBT-modules

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中文翻译

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FZ2400R12KE3 数据手册

Technische Information / technical information

IGBT-Module

IGBT-modules

FZ2400R12KE3

IGBT-Wechselrichter / IGBT-inverter

Höchstzulässige Werte / maximum rated values

Kollektor-Emitter-Sperrspannung

collector-emitter voltage

TÝÎ = 25°C

V†Š»

1200

Kollektor-Dauergleichstrom

DC-collector current

T† = 70°C, TÝÎ = 150°C

T† = 25°C, TÝÎ = 150°C

I† ÒÓÑ

I†

2400

3200

Periodischer Kollektor Spitzenstrom

repetitive peak collector current

t« = 1 ms

I†ç¢

PÚÓÚ

4800

10,0

Gesamt-Verlustleistung

total power dissipation

T† = 25°C, TÝÎ = 150°C

Gate-Emitter-Spitzenspannung

gate-emitter peak voltage

V•Š»

+/-20

Charakteristische Werte / characteristic values

min. typ. max.

Kollektor-Emitter Sättigungsspannung

collector-emitter saturation voltage

I† = 2400 A, V•Š = 15 V

TÝÎ = 25°C

TÝÎ = 125°C

1,70 2,15

2,00 2,50

V†Š ÙÈÚ

V•ŠÚÌ

Q•

Gate-Schwellenspannung

gate threshold voltage

I† = 96,0 mA, V†Š = V•Š, TÝÎ = 25°C

V•Š = -15 V ... +15 V

5,0

5,8

23,0

0,8

6,5

µC

Gateladung

gate charge

Interner Gatewiderstand

internal gate resistor

TÝÎ = 25°C

R•ÍÒÚ

CÍþÙ

Eingangskapazität

input capacitance

f = 1 MHz, TÝÎ = 25°C, V†Š = 25 V, V•Š = 0 V

V†Š = 1200 V, V•Š = 0 V, TÝÎ = 25°C

V†Š = 0 V, V•Š = 20 V, TÝÎ = 25°C

170

8,00

Rückwirkungskapazität

reverse transfer capacitance

CØþÙ

I†Š»

Kollektor-Emitter Reststrom

collector-emitter cut-off current

5,0

Gate-Emitter Reststrom

gate-emitter leakage current

I•Š»

tÁ ÓÒ

400

Einschaltverzögerungszeit (ind. Last)

turn-on delay time (inductive load)

I† = 2400 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 1,2 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,60

0,66

µs

Anstiegszeit (induktive Last)

rise time (inductive load)

I† = 2400 A, V†Š = 600 V

V•Š = ±15 V

R•ÓÒ = 1,2 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,22

0,23

µs

tØ

tÁ ÓËË

tË

Abschaltverzögerungszeit (ind. Last)

turn-off delay time (inductive load)

I† = 2400 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 0,3 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,82

0,96

µs

Fallzeit (induktive Last)

fall time (inductive load)

I† = 2400 A, V†Š = 600 V

V•Š = ±15 V

R•ÓËË = 0,3 Â

TÝÎ = 25°C

TÝÎ = 125°C

0,15

0,18

µs

Einschaltverlustenergie pro Puls

turn-on energy loss per pulse

I† = 2400 A, V†Š = 600 V

V•Š = ±15 V, L» = 30 nH

R•ÓÒ = 1,2 Â

TÝÎ = 25°C

TÝÎ = 125°C

EÓÒ

490

380

Abschaltverlustenergie pro Puls

turn-off energy loss per pulse

I† = 2400 A, V†Š = 600 V

V•Š = ±15 V, L» = 30 nH

R•ÓËË = 0,3 Â

TÝÎ = 25°C

TÝÎ = 125°C

EÓËË

Kurzschlußverhalten

SC data

t« ù 10 µs, V•Š ù 15 V

TÝÎ = 125°C, V†† = 900 V, V†ŠÑÈà = V†Š» -LÙ†Š ·di/dt

I»†

9600

Innerer Wärmewiderstand

thermal resistance, junction to case

pro IGBT

per IGBT

RÚÌœ†

12,5 K/kW

prepared by: Mark Münzer

date of publication: 2004-5-25

revision: 3.1

approved by: Christoph Lübke

12 3 4 5 6 7 8

中文翻译

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与FZ2400R12KE3相关器件

型号	品牌	获取价格	描述	数据表
FZ2400R12KE3_B9	EUPEC	获取价格	IGBT-modules
FZ2400R12KE3B9NOSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 3200A I(C), 1200V V(BR)CES, N-Channel, MODULE-9
FZ2400R12KL4C	ETC	获取价格	IGBT Module
FZ2400R17HE4_B9	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
FZ2400R17HE4B9HOSA2	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9
FZ2400R17HE4B9NPSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor,
FZ2400R17HE4P_B9	INFINEON	获取价格	TIM
FZ2400R17HE4PB9HPSA1	INFINEON	获取价格	Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9
FZ2400R17HP4	INFINEON	获取价格	IHM-B module with soft-switching Trench-IGBT4
FZ2400R17HP4_B2	INFINEON	获取价格	IHM-B module with soft-switching Trench-IGBT4

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