是否无铅: | 含铅 | 是否Rohs认证: | 符合 |
生命周期: | Active | 零件包装代码: | MODULE |
包装说明: | FLANGE MOUNT, R-XUFM-X3 | 针数: | 9 |
Reach Compliance Code: | compliant | ECCN代码: | EAR99 |
风险等级: | 5.13 | 外壳连接: | ISOLATED |
最大集电极电流 (IC): | 2400 A | 集电极-发射极最大电压: | 1700 V |
配置: | COMPLEX | 门极-发射极最大电压: | 20 V |
JESD-30 代码: | R-XUFM-X3 | 湿度敏感等级: | 1 |
元件数量: | 3 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | UNSPECIFIED |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
峰值回流温度(摄氏度): | NOT SPECIFIED | 极性/信道类型: | N-CHANNEL |
最大功率耗散 (Abs): | 15500 W | 认证状态: | Not Qualified |
子类别: | Insulated Gate BIP Transistors | 表面贴装: | NO |
端子形式: | UNSPECIFIED | 端子位置: | UPPER |
处于峰值回流温度下的最长时间: | NOT SPECIFIED | 晶体管应用: | POWER CONTROL |
晶体管元件材料: | SILICON | 标称断开时间 (toff): | 1800 ns |
标称接通时间 (ton): | 760 ns | VCEsat-Max: | 2.25 V |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FZ2400R17HP4_B2 | INFINEON |
类似代替 |
IHM-B module with soft-switching Trench-IGBT4 | |
FZ2400R17HP4_B29 | INFINEON |
功能相似 |
IHM-B module with soft-switching Trench-IGBT4 | |
FZ2400R17HP4 | INFINEON |
功能相似 |
IHM-B module with soft-switching Trench-IGBT4 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FZ2400R17HP4B28BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor | |
FZ2400R17HP4B29BOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9 | |
FZ2400R17HP4B2BOSA2 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-7 | |
FZ2400R17HP4B9HOSA2 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 1700V V(BR)CES, N-Channel, MODULE-9 | |
FZ2400R17HP4HOSA2 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 2400A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 | |
FZ2400R17KE3 | EUPEC |
获取价格 |
IGBT-modules | |
FZ2400R17KE3_B2 | EUPEC |
获取价格 |
IGBT-modules | |
FZ2400R17KE3_B9 | EUPEC |
获取价格 |
IGBT-modules | |
FZ2400R17KE3NOSA1 | INFINEON |
获取价格 |
Insulated Gate Bipolar Transistor, 3200A I(C), 1700V V(BR)CES, N-Channel, MODULE-7 | |
FZ2400R17KF6CB2 | ETC |
获取价格 |
IGBT Module |