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FQP3N60 PDF预览

FQP3N60

更新时间: 2024-11-15 22:14:31
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD /
页数 文件大小 规格书
8页 571K
描述
600V N-Channel MOSFET

FQP3N60 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-220AB包装说明:TO-220, 3 PIN
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.65
雪崩能效等级(Eas):200 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):3 A
最大漏极电流 (ID):3 A最大漏源导通电阻:3.6 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT APPLICABLE
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):75 W
最大脉冲漏极电流 (IDM):12 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT APPLICABLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQP3N60 数据手册

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April 2000  
TM  
QFET  
FQP3N60  
600V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switch mode power supply.  
3.0A, 600V, R  
= 3.6@V = 10 V  
DS(on) GS  
Low gate charge ( typical 10 nC)  
Low Crss ( typical 5.5 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
"
! "  
"
"
G
!
G
D
TO-220  
FQP Series  
S
!
S
Absolute Maximum Ratings  
 
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQP3N60  
600  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
3.0  
A
D
C
- Continuous (T = 100°C)  
1.9  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
12  
A
DM  
V
E
I
Gate-Source Voltage  
±30  
200  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AS  
3.0  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
7.5  
mJ  
V/ns  
W
AR  
dv/dt  
4.5  
P
Power Dissipation (T = 25°C)  
75  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.6  
W/°C  
°C  
T , T  
-55 to +150  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
Thermal Resistance, Junction-to-Ambient  
Typ  
--  
Max  
1.67  
--  
Units  
°CW  
°CW  
°CW  
R
R
R
θ
θ
θ
JC  
CS  
JA  
0.5  
--  
62.5  
©2000 Fairchild Semiconductor International  
Rev. A, April 2000  

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