Datasheet > FQP1N60

FQP1N60

更新时间： 2024-09-17 10:23:35

品牌	Logo	应用领域
TGS		晶体晶体管开关脉冲局域网
页数	文件大小	规格书
1页	60K
描述
600V N-Channel MOSFET

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FQP1N60 数据手册

TIGER ELECTRONIC CO.,LTD

Product specification

600V N-Channel MOSFET

FQP1N60

DESCRIPTION

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s

proprietary,planar, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior

switching performance, and withstand high energy pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency switch mode power supplies.

ABSOLUTE MAXIMUM RATINGS ( Ta = 25 ^OC)

Parameter

Drain-Source Voltage

Drain Current - Continuous

Drain Current - Pulsed

Gate-Source Voltage

Value Unit

Symbol

V_DSS

600

1.0

3.0

I_D

I_DM

V_GSS

P_D

Power Dissipation

150

^oC

T_j

Max. Operating Junction Temperature

Storage Temperature

TO-220

T_stg

-55~150 ^oC

ELECTRICAL CHARACTERISTICS

( Ta = 25 C)

Parameter

Symbol

Test Conditions

Min.

Typ. Max. Unit

Drain-Source Breakdown Voltage

Zero Gate Voltage Drain Current

BV_DSSV_GS= 0V, I =250 A

600

—

I_DSS

V_DS=600V, V_GS=0V

1.0

—

Gate-Body Leakage Current, Forward

Gate-Body Leakage Current, Reverse

I_GSSFV_GS=30V, V_DS=0V

I_GSSRV_GS= -30V, V_DS=0V

100

-100

4.0

—

Gate Threshold Voltage

V_GS(th)V_DS= V_GS, I =250 A

2.0

—

Static Drain-Source On-Resistance

Drain-Source Diode Forward Voltage

R_DS(on)V_GS= 10 V, I_D= 0.5 A

9.7

—

V_SD

V_GS= 0 V, I_S= 1.0 A

1.4

—

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