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FQP27P06J69Z PDF预览

FQP27P06J69Z

更新时间: 2024-09-16 20:05:35
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 局域网开关脉冲晶体管
页数 文件大小 规格书
8页 695K
描述
Power Field-Effect Transistor, 27A I(D), 60V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN

FQP27P06J69Z 技术参数

生命周期:Obsolete零件包装代码:SFM
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.83雪崩能效等级(Eas):560 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (ID):27 A最大漏源导通电阻:0.07 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
极性/信道类型:P-CHANNEL最大脉冲漏极电流 (IDM):108 A
认证状态:Not Qualified表面贴装:NO
端子形式:THROUGH-HOLE端子位置:SINGLE
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQP27P06J69Z 数据手册

 浏览型号FQP27P06J69Z的Datasheet PDF文件第2页浏览型号FQP27P06J69Z的Datasheet PDF文件第3页浏览型号FQP27P06J69Z的Datasheet PDF文件第4页浏览型号FQP27P06J69Z的Datasheet PDF文件第5页浏览型号FQP27P06J69Z的Datasheet PDF文件第6页浏览型号FQP27P06J69Z的Datasheet PDF文件第7页 
May 2001  
TM  
QFET  
FQP27P06  
60V P-Channel MOSFET  
General Description  
Features  
These P-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand a high energy pulse in the  
avalanche and commutation modes. These devices are  
well suited for low voltage applications such as automotive,  
DC/DC converters, and high efficiency switching for power  
management in portable and battery operated products.  
-27A, -60V, R  
= 0.07@V = -10 V  
DS(on) GS  
Low gate charge ( typical 33 nC)  
Low Crss ( typical 120 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
S
!
G!  
TO-220  
FQP Series  
G
D S  
!
D
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQP27P06  
-60  
Units  
V
V
I
Drain-Source Voltage  
DSS  
- Continuous (T = 25°C)  
Drain Current  
-27  
A
D
C
- Continuous (T = 100°C)  
-19.1  
-108  
± 25  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
V
GSS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
560  
mJ  
A
AS  
-27  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
12  
mJ  
V/ns  
W
AR  
dv/dt  
-7.0  
P
Power Dissipation (T = 25°C)  
120  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.8  
W/°C  
°C  
T , T  
-55 to +175  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
Thermal Resistance, Junction-to-Ambient  
Typ  
--  
Max  
1.25  
--  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
θJC  
θCS  
θJA  
0.5  
--  
62.5  
©2001 Fairchild Semiconductor Corporation  
Rev. A2. May 2001  

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