生命周期: | Obsolete | 零件包装代码: | SFM |
包装说明: | FLANGE MOUNT, R-PSFM-T3 | 针数: | 3 |
Reach Compliance Code: | unknown | 风险等级: | 5.69 |
雪崩能效等级(Eas): | 140 mJ | 配置: | SINGLE WITH BUILT-IN DIODE |
最小漏源击穿电压: | 600 V | 最大漏极电流 (ID): | 2.4 A |
最大漏源导通电阻: | 4.7 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | FLANGE MOUNT | 极性/信道类型: | N-CHANNEL |
最大脉冲漏极电流 (IDM): | 9.6 A | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | SINGLE | 晶体管应用: | SWITCHING |
晶体管元件材料: | SILICON | Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQP2N80 | FAIRCHILD |
获取价格 |
800V N-Channel MOSFET | |
FQP2N80 | ONSEMI |
获取价格 |
N 沟道,QFET® MOSFET,800V,2.4A,6.3Ω | |
FQP2N80-Q | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET | |
FQP2N90 | FAIRCHILD |
获取价格 |
900V N-Channel MOSFET | |
FQP2N90 | ONSEMI |
获取价格 |
功率 MOSFET,N 沟道,QFET®,900 V,2.2 A,7.2 Ω,TO-220 | |
FQP2N90_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Met | |
FQP2N90J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Met | |
FQP2NA90 | FAIRCHILD |
获取价格 |
900V N-Channel MOSFET | |
FQP2P25 | FAIRCHILD |
获取价格 |
250V P-Channel MOSFET | |
FQP2P25J69Z | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 2.3A I(D), 250V, 4ohm, 1-Element, P-Channel, Silicon, Metal |