5秒后页面跳转
FQP30N06 PDF预览

FQP30N06

更新时间: 2024-11-26 22:25:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管功率场效应晶体管开关脉冲PC局域网
页数 文件大小 规格书
8页 661K
描述
60V N-Channel MOSFET

FQP30N06 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.72
Samacsys Confidence:3Samacsys Status:Released
Samacsys PartID:167468Samacsys Pin Count:3
Samacsys Part Category:MOSFET (N-Channel)Samacsys Package Category:Transistor Outline, Vertical
Samacsys Footprint Name:FQP30N06Samacsys Released Date:2020-02-11 04:33:54
Is Samacsys:N雪崩能效等级(Eas):280 mJ
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:60 V
最大漏极电流 (Abs) (ID):30 A最大漏极电流 (ID):30 A
最大漏源导通电阻:0.04 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:N-CHANNEL
最大功率耗散 (Abs):79 W最大脉冲漏极电流 (IDM):120 A
认证状态:Not Qualified子类别:FET General Purpose Power
表面贴装:NO端子面层:Matte Tin (Sn)
端子形式:THROUGH-HOLE端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICONBase Number Matches:1

FQP30N06 数据手册

 浏览型号FQP30N06的Datasheet PDF文件第2页浏览型号FQP30N06的Datasheet PDF文件第3页浏览型号FQP30N06的Datasheet PDF文件第4页浏览型号FQP30N06的Datasheet PDF文件第5页浏览型号FQP30N06的Datasheet PDF文件第6页浏览型号FQP30N06的Datasheet PDF文件第7页 
TM  
QFET  
FQP30N06  
60V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as automotive, DC/  
DC converters, and high efficiency switching for power  
management in portable and battery operated products.  
30A, 60V, R  
= 0.04@V = 10 V  
DS(on) GS  
Low gate charge ( typical 19 nC)  
Low Crss ( typical 40 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
175°C maximum junction temperature rating  
D
!
"
! "  
"
G !  
"
TO-220  
FQP Series  
G
D S  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQP30N06  
Units  
V
V
I
Drain-Source Voltage  
60  
30  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
21.3  
120  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
280  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
30  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
7.9  
mJ  
V/ns  
W
AR  
dv/dt  
7.0  
P
Power Dissipation (T = 25°C)  
79  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.53  
-55 to +175  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink  
Thermal Resistance, Junction-to-Ambient  
Typ  
--  
Max  
1.90  
--  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
θJC  
θCS  
θJA  
0.5  
--  
62.5  
©2003 Fairchild Semiconductor Corporation  
Rev. A2, March 2003  

FQP30N06 替代型号

型号 品牌 替代类型 描述 数据表
STP36NF06L STMICROELECTRONICS

功能相似

N-channel 60V - 0.032ohm - 30A - TO-220 - D2PAK STripFET TM II Power MOSFET
STP16NF06L STMICROELECTRONICS

功能相似

N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220F
STP16NF06 STMICROELECTRONICS

功能相似

N-CHANNEL 60V - 0.08 ohm - 16A TO-220/TO-220F

与FQP30N06相关器件

型号 品牌 获取价格 描述 数据表
FQP30N06J69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 30A I(D), 60V, 0.04ohm, 1-Element, N-Channel, Silicon, Meta
FQP30N06L FAIRCHILD

获取价格

60V LOGIC N-Channel MOSFET
FQP30N06L ONSEMI

获取价格

功率 MOSFET,N 沟道,逻辑电平,QFET®,60 V,32 A,35 mΩ,TO-
FQP32N12V2 FAIRCHILD

获取价格

120V N-Channel MOSFET
FQP32N20C FAIRCHILD

获取价格

200V N-Channel MOSFET
FQP32N20C ONSEMI

获取价格

功率 MOSFET,N 沟道,QFET®, 200 V,28 A,82 mΩ,TO-220
FQP33N10 ONSEMI

获取价格

功率 MOSFET,N 沟道,QFET®,100 V,33 A,52 mΩ,TO-220
FQP33N10 FAIRCHILD

获取价格

100V N-Channel MOSFET
FQP33N10-F080 FAIRCHILD

获取价格

Transistor
FQP33N10L FAIRCHILD

获取价格

100V LOGIC N-Channel MOSFET