5秒后页面跳转
FQP2N60C PDF预览

FQP2N60C

更新时间: 2024-11-05 22:25:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 晶体晶体管开关脉冲PC局域网
页数 文件大小 规格书
10页 831K
描述
600V N-Channel MOSFET

FQP2N60C 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:TO-220
包装说明:FLANGE MOUNT, R-PSFM-T3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.21
雪崩能效等级(Eas):120 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:600 V最大漏极电流 (Abs) (ID):2 A
最大漏极电流 (ID):2 A最大漏源导通电阻:4.7 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJEDEC-95代码:TO-220AB
JESD-30 代码:R-PSFM-T3JESD-609代码:e3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT峰值回流温度(摄氏度):NOT SPECIFIED
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):54 W
最大脉冲漏极电流 (IDM):8 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQP2N60C 数据手册

 浏览型号FQP2N60C的Datasheet PDF文件第2页浏览型号FQP2N60C的Datasheet PDF文件第3页浏览型号FQP2N60C的Datasheet PDF文件第4页浏览型号FQP2N60C的Datasheet PDF文件第5页浏览型号FQP2N60C的Datasheet PDF文件第6页浏览型号FQP2N60C的Datasheet PDF文件第7页 
TM  
QFET  
FQP2N60C/FQPF2N60C  
600V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for high efficiency switched mode power supplies,  
active power factor correction, electronic lamp ballasts  
based on half bridge topology.  
2.0A, 600V, R  
= 4.7@V = 10 V  
DS(on) GS  
Low gate charge ( typical 8.5 nC)  
Low Crss ( typical 4.3 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
G!  
TO-220F  
FQPF Series  
TO-220  
FQP Series  
G D  
S
G
D S  
!
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQP2N60C  
FQPF2N60C  
Units  
V
V
I
Drain-Source Voltage  
600  
DSS  
- Continuous (T = 25°C)  
Drain Current  
2.0  
1.35  
8
2.0 *  
1.35 *  
8 *  
A
D
C
- Continuous (T = 100°C)  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
A
DM  
V
E
I
Gate-Source Voltage  
± 30  
120  
2.0  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
5.4  
mJ  
V/ns  
W
AR  
dv/dt  
4.5  
P
Power Dissipation (T = 25°C)  
54  
23  
D
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.43  
0.18  
W/°C  
°C  
T , T  
-55 to +150  
300  
J
STG  
Maximum lead temperature for soldering purposes,  
T
°C  
L
1/8" from case for 5 seconds  
* Drain current limited by maximum junction temperature.  
Thermal Characteristics  
Symbol  
Parameter  
FQP2N60C  
FQPF2N60C  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Case-to-Sink Typ.  
Thermal Resistance, Junction-to-Ambient  
2.32  
0.5  
5.5  
--  
θJC  
θCS  
62.5  
62.5  
θJA  
©2003 Fairchild Semiconductor Corporation  
Rev. A, September 2003  

FQP2N60C 替代型号

型号 品牌 替代类型 描述 数据表
FQP2N60C ONSEMI

功能相似

功率 MOSFET,N 沟道,QFET®,600 V,2 A,4.7 Ω,TO-220

与FQP2N60C相关器件

型号 品牌 获取价格 描述 数据表
FQP2N60J69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Met
FQP2N80 FAIRCHILD

获取价格

800V N-Channel MOSFET
FQP2N80 ONSEMI

获取价格

N 沟道,QFET® MOSFET,800V,2.4A,6.3Ω
FQP2N80-Q FAIRCHILD

获取价格

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FQP2N90 FAIRCHILD

获取价格

900V N-Channel MOSFET
FQP2N90 ONSEMI

获取价格

功率 MOSFET,N 沟道,QFET®,900 V,2.2 A,7.2 Ω,TO-220
FQP2N90_NL FAIRCHILD

获取价格

Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Met
FQP2N90J69Z FAIRCHILD

获取价格

Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Met
FQP2NA90 FAIRCHILD

获取价格

900V N-Channel MOSFET
FQP2P25 FAIRCHILD

获取价格

250V P-Channel MOSFET