Datasheet > FQP2N60

FQP2N60

更新时间： 2024-11-05 22:25:15

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飞兆/仙童 - FAIRCHILD		/
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描述
600V N-Channel MOSFET

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数据手册
替代型号

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FQP2N60 数据手册

April 2000

QFET

FQP2N60

600V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switch mode power supply.

•

2.4A, 600V, R

= 4.7Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 9.0 nC)

Low Crss ( typical 5.0 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

TO-220

FQP Series

Absolute Maximum Ratings

ꢀꢀ

T = 25°C unless otherwise noted

Symbol

Parameter

FQP2N60

600

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

2.4

- Continuous (T = 100°C)

1.5

(Note 1)

Drain Current

- Pulsed

9.6

Gate-Source Voltage

±ꢀ30

140

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

2.4

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

6.4

V/ns

dv/dt

4.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.51

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8ꢀ from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

1.95

Units

°CꢁW

0.5

62.5

Rev. A, April 2000

12 3 4 5 6 7 8

中文翻译

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FQP2N60 替代型号

型号	品牌	替代类型	描述	数据表
FQP2N60C	ONSEMI	功能相似	功率 MOSFET，N 沟道，QFET®，600 V，2 A，4.7 Ω，TO-220

与FQP2N60相关器件

型号	品牌	获取价格	描述	数据表
FQP2N60C	FAIRCHILD	获取价格	600V N-Channel MOSFET
FQP2N60C	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，600 V，2 A，4.7 Ω，TO-220
FQP2N60J69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.4A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Met
FQP2N80	FAIRCHILD	获取价格	800V N-Channel MOSFET
FQP2N80	ONSEMI	获取价格	N 沟道，QFET® MOSFET，800V，2.4A，6.3Ω
FQP2N80-Q	FAIRCHILD	获取价格	Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
FQP2N90	FAIRCHILD	获取价格	900V N-Channel MOSFET
FQP2N90	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，900 V，2.2 A，7.2 Ω，TO-220
FQP2N90_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Met
FQP2N90J69Z	FAIRCHILD	获取价格	Power Field-Effect Transistor, 2.2A I(D), 900V, 7.2ohm, 1-Element, N-Channel, Silicon, Met