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FQP27P06_SW82127 PDF预览

FQP27P06_SW82127

更新时间: 2024-11-25 15:46:11
品牌 Logo 应用领域
安森美 - ONSEMI /
页数 文件大小 规格书
8页 479K
描述
Transistor

FQP27P06_SW82127 技术参数

是否Rohs认证: 符合生命周期:Active
Reach Compliance Code:compliant风险等级:5.05
雪崩能效等级(Eas):560 mJ配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:60 V最大漏极电流 (Abs) (ID):27 A
最大漏极电流 (ID):27 A最大漏源导通电阻:0.07 Ω
FET 技术:METAL-OXIDE SEMICONDUCTOR最大反馈电容 (Crss):155 pF
JEDEC-95代码:TO-220ABJESD-30 代码:R-PSFM-T3
JESD-609代码:e3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
最高工作温度:175 °C最低工作温度:-55 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:FLANGE MOUNT极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):120 W最大脉冲漏极电流 (IDM):108 A
子类别:Other Transistors表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE晶体管应用:SWITCHING
晶体管元件材料:SILICON最大关闭时间(toff):260 ns
最大开启时间(吨):425 nsBase Number Matches:1

FQP27P06_SW82127 数据手册

 浏览型号FQP27P06_SW82127的Datasheet PDF文件第2页浏览型号FQP27P06_SW82127的Datasheet PDF文件第3页浏览型号FQP27P06_SW82127的Datasheet PDF文件第4页浏览型号FQP27P06_SW82127的Datasheet PDF文件第5页浏览型号FQP27P06_SW82127的Datasheet PDF文件第6页浏览型号FQP27P06_SW82127的Datasheet PDF文件第7页 
March 2013  
FQP27P06  
P-Channel QFET MOSFET  
- 60 V, - 27 A, 70 m  
®
Description  
Features  
This P-Channel enhancement mode power MOSFET is  
produced using Fairchild Semiconductor®’s proprietary  
planar stripe and DMOS technology. This advanced  
MOSFET technology has been especially tailored to reduce  
on-state resistance, and to provide superior switching  
performance and high avalanche energy strength. These  
devices are suitable for switched mode power supplies,  
audio amplifier, DC motor control, and variable switching  
power applications.  
- 27 A, - 60 V, RDS(on) = 70 m(Max.) @ VGS = - 10 V,  
D = - 13.5 A  
I
Low Gate Charge (Typ. 33 nC)  
Low Crss (Typ. 120 pF)  
100% Avalanche Tested  
175C Maximum Junction Temperature Rating  
S
G  
G
D
TO-220  
D
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
VDSS  
Parameter  
FQP27P06  
-60  
Unit  
V
Drain-Source Voltage  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
-27  
A
-19.1  
-108  
25  
A
IDM  
(Note 1)  
Drain Current  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
V
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
560  
mJ  
A
-27  
EAR  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TC = 25°C)  
12  
mJ  
V/ns  
W
dv/dt  
PD  
-7.0  
120  
- Derate above 25°C  
Operating and Storage Temperature Range  
0.8  
W/°C  
°C  
TJ, TSTG  
TL  
-55 to +175  
Maximum lead temperature for soldering purposes,  
300  
°C  
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
FQP27P06  
1.25  
Unit  
°C/W  
°C/W  
°C/W  
RJC  
RCS  
RJA  
Thermal Resistance, Junction-to-Case, Max.  
Thermal Resistance, Case-to-Sink, Typ.  
Thermal Resistance, Junction-to-Ambient, Max.  
0.5  
62.5  
©2001 Fairchild Semiconductor Corporation  
FQP27P06 Rev.C0  
1
www.fairchildsemi.com  

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