Datasheet > FQP26N03L

FQP26N03L

更新时间： 2024-11-24 23:52:47

品牌	Logo	应用领域
其他 - ETC		晶体晶体管
页数	文件大小	规格书
8页	680K
描述
TRANSISTOR \| MOSFET \| N-CHANNEL \| 30V V(BR)DSS \| 26A I(D) \| TO-220

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数据手册

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FQP26N03L 数据手册

May 2001

QFET

FQP26N03L

30V LOGIC N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as DC/DC

converters, high efficiency switching for power

management in portable and battery operated products.

•

26A, 30V, R

= 0.037Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 8.0 nC)

Low Crss ( typical 60 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

175°C maximum junction temperature rating

! "

TO-220

FQP Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQP26N03L

Units

Drain-Source Voltage

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

18.4

104

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 20

150

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

5.0

V/ns

dv/dt

7.0

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.33

-55 to +175

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Thermal Resistance, Junction-to-Case

Thermal Resistance, Case-to-Sink

Thermal Resistance, Junction-to-Ambient

Typ

Max

3.0

Units

°C/W

θJC

θCS

θJA

0.5

62.5

Rev. A1. May 2001

12 3 4 5 6 7 8

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