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FQP20N06 PDF预览

FQP20N06

更新时间： 2024-11-26 11:11:43
品牌 Logo 应用领域
安森美 - ONSEMI 局域网开关脉冲晶体管
页数 文件大小 规格书
10页 785K
描述
功率 MOSFET，N 沟道，QFET®，60 V，20 A，60 mΩ，TO-220

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中文翻译

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FQP20N06 技术参数

是否无铅： 不含铅生命周期：Active
包装说明：FLANGE MOUNT, R-PSFM-T3Reach Compliance Code：compliant
ECCN代码：EAR99HTS代码：8541.29.00.95
Factory Lead Time：1 week风险等级：0.95
雪崩能效等级（Eas）：155 mJ配置：SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：60 V最大漏极电流 (Abs) (ID)：20 A
最大漏极电流 (ID)：20 A最大漏源导通电阻：0.06 Ω
FET 技术：METAL-OXIDE SEMICONDUCTORJEDEC-95代码：TO-220AB
JESD-30 代码：R-PSFM-T3JESD-609代码：e3
元件数量：1端子数量：3
工作模式：ENHANCEMENT MODE最高工作温度：175 °C
封装主体材料：PLASTIC/EPOXY封装形状：RECTANGULAR
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：N-CHANNEL最大功率耗散 (Abs)：53 W
最大脉冲漏极电流 (IDM)：80 A认证状态：Not Qualified
子类别：FET General Purpose Power表面贴装：NO
端子面层：Tin (Sn)端子形式：THROUGH-HOLE
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
Base Number Matches：1

FQP20N06 数据手册

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中文翻译

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FQP20N06L ONSEMI

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FQP22N30 FAIRCHILD

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 		300V N-Channel MOSFET
FQP22N30 ONSEMI

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 		功率 MOSFET，N 沟道，QFET®， 300 V，21 A，160 mΩ，TO-22
FQP22P10 FAIRCHILD

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 		100V P-Channel MOSFET
FQP24N08 FAIRCHILD

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 		80V N-Channel MOSFET
FQP24N08 ONSEMI

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 		功率 MOSFET，N 沟道，QFET®， 80 V，24 A，60 mΩ，TO-220
FQP26N03L ETC

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 		TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 26A I(D) | TO-220
FQP26N03LJ69Z FAIRCHILD

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 		Power Field-Effect Transistor, 26A I(D), 30V, 0.048ohm, 1-Element, N-Channel, Silicon, Met

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