Datasheet > FQD12P10TM-F085

FQD12P10TM-F085

更新时间： 2024-11-21 11:11:15

品牌	Logo	应用领域
安森美 - ONSEMI		开关脉冲晶体管
页数	文件大小	规格书
9页	757K
描述
Power MOSFET, Single P-Channel, -100 V, 290 mΩ, -9.4 A

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FQD12P10TM-F085 技术参数

是否无铅：	不含铅	生命周期：	Not Recommended
包装说明：	SMALL OUTLINE, R-PSSO-G2	Reach Compliance Code：	not_compliant
ECCN代码：	EAR99	风险等级：	7.14
Is Samacsys：	N	雪崩能效等级（Eas）：	370 mJ
外壳连接：	DRAIN	配置：	SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压：	100 V	FET 技术：	METAL-OXIDE SEMICONDUCTOR
JESD-30 代码：	R-PSSO-G2	JESD-609代码：	e3
湿度敏感等级：	1	元件数量：	1
端子数量：	2	工作模式：	ENHANCEMENT MODE
最高工作温度：	150 °C	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	260	极性/信道类型：	P-CHANNEL
最大脉冲漏极电流 (IDM)：	37.6 A	认证状态：	Not Qualified
参考标准：	AEC-Q101	表面贴装：	YES
端子面层：	Tin (Sn)	端子形式：	GULL WING
端子位置：	SINGLE	处于峰值回流温度下的最长时间：	30
晶体管应用：	SWITCHING	晶体管元件材料：	SILICON
Base Number Matches：	1

FQD12P10TM-F085 数据手册

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与FQD12P10TM-F085相关器件

型号	品牌	获取价格	描述	数据表
FQD13N06	FAIRCHILD	获取价格	60V N-Channel MOSFET
FQD13N06_09	FAIRCHILD	获取价格	60V N-Channel MOSFET
FQD13N06_NL	FAIRCHILD	获取价格	暂无描述
FQD13N06L	FAIRCHILD	获取价格	60V LOGIC N-Channel MOSFET
FQD13N06LTF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Met
FQD13N06LTF	ROCHESTER	获取价格	11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD13N06LTF_NL	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Met
FQD13N06LTM	ROCHESTER	获取价格	11A, 60V, 0.145ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD13N06LTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 11A I(D), 60V, 0.145ohm, 1-Element, N-Channel, Silicon, Met
FQD13N06LTM	ONSEMI	获取价格	功率 MOSFET，N 沟道，逻辑电平，QFET®，60 V，11 A，115 mΩ，DP

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