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FQD13N10TM PDF预览

FQD13N10TM

更新时间: 2024-11-24 21:19:19
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
9页 617K
描述
Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

FQD13N10TM 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Transferred零件包装代码:DPAK
包装说明:DPAK-3针数:3
Reach Compliance Code:not_compliantECCN代码:EAR99
HTS代码:8541.29.00.95风险等级:5.22
雪崩能效等级(Eas):95 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:100 V
最大漏极电流 (Abs) (ID):10 A最大漏极电流 (ID):10 A
最大漏源导通电阻:0.18 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):40 W
最大脉冲漏极电流 (IDM):40 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQD13N10TM 数据手册

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January 2001  
TM  
QFET  
FQD13N10 / FQU13N10  
100V N-Channel MOSFET  
General Description  
Features  
These N-Channel enhancement mode power field effect  
transistors are produced using Fairchild’s proprietary,  
planar stripe, DMOS technology.  
This advanced technology has been especially tailored to  
minimize on-state resistance, provide superior switching  
performance, and withstand high energy pulse in the  
avalanche and commutation mode. These devices are well  
suited for low voltage applications such as audio amplifier,  
high efficiency switching DC/DC converters, and DC motor  
control.  
10A, 100V, R  
= 0.18@V = 10 V  
DS(on) GS  
Low gate charge ( typical 12 nC)  
Low Crss ( typical 20 pF)  
Fast switching  
100% avalanche tested  
Improved dv/dt capability  
D
!
D
"
! "  
"
"
!
G
I-PAK  
FQU Series  
D-PAK  
FQD Series  
G
S
G
D
!
S
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted  
C
Symbol  
Parameter  
FQD13N10 / FQU13N10  
Units  
V
V
I
Drain-Source Voltage  
100  
10  
DSS  
- Continuous (T = 25°C)  
Drain Current  
A
D
C
- Continuous (T = 100°C)  
6.3  
A
C
I
(Note 1)  
Drain Current  
- Pulsed  
40  
A
DM  
V
E
I
Gate-Source Voltage  
± 25  
95  
V
GSS  
AS  
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
10  
AR  
E
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
4.0  
mJ  
V/ns  
W
AR  
dv/dt  
6.0  
Power Dissipation (T = 25°C) *  
2.5  
P
A
D
Power Dissipation (T = 25°C)  
40  
W
C
- Derate above 25°C  
Operating and Storage Temperature Range  
0.32  
-55 to +150  
W/°C  
°C  
T , T  
J
STG  
Maximum lead temperature for soldering purposes,  
T
300  
°C  
L
1/8" from case for 5 seconds  
Thermal Characteristics  
Symbol  
Parameter  
Typ  
--  
Max  
3.13  
50  
Units  
°C/W  
°C/W  
°C/W  
R
R
R
Thermal Resistance, Junction-to-Case  
Thermal Resistance, Junction-to-Ambient *  
Thermal Resistance, Junction-to-Ambient  
θJC  
θJA  
θJA  
--  
--  
110  
* When mounted on the minimum pad size recommended (PCB Mount)  
©2000 Fairchild Semiconductor International  
Rev. A1, January 2001  

FQD13N10TM 替代型号

型号 品牌 替代类型 描述 数据表
STD10NF10T4 STMICROELECTRONICS

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