Datasheet > FQD13N10_13

FQD13N10_13

更新时间： 2024-11-05 12:34:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	1376K
描述
N-Channel QFET MOSFET

阅读下载

中文翻译

获取价格

数据手册

如果您发现信息不准确，欢迎纠错

FQD13N10_13 数据手册

March 2013

FQD13N10 / FQU13N10

N-Channel QFET MOSFET

100 V, 10 A, 180 mΩ

Description

Features

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor®’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

audio amplifier, DC motor control, and variable switching

power applications.

•

10 A, 100 V, R_DS(on)= 180 mΩ (Max) @V_GS= 10

V, I_D= 5.0 A

•

Low Gate Charge (Typ. 12 nC)

Low Crss (Typ. 20 pF)

100% Avalanche Tested

! "

I-PAK

FQU Series

D-PAK

FQD Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD13N10 / FQU13N10

Unit

Drain-Source Voltage

100

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

6.3

(Note 1)

Drain Current

- Pulsed

Gate-Source Voltage

± 25

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

4.0

V/ns

dv/dt

6.0

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.32

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

3.13

Unit

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

°C/W

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

www.fairchildsemi.com

FQD13N10 / FQU13N10 Rev. C0

12 3 4 5 6 7...9

中文翻译

下载PDF

与FQD13N10_13相关器件

型号	品牌	获取价格	描述	数据表
FQD13N10L	FAIRCHILD	获取价格	100V LOGIC N-Channel MOSFET
FQD13N10LTF	FAIRCHILD	获取价格	暂无描述
FQD13N10LTM	ONSEMI	获取价格	功率 MOSFET，N 沟道，逻辑电平，QFET®，100 V，10 A，180 mΩ，D
FQD13N10LTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.2ohm, 1-Element, N-Channel, Silicon, Meta
FQD13N10LTM	UMW	获取价格	种类:N-Channel;漏源电压（Vdss）:100V;持续漏极电流（Id）（在25°C
FQD13N10TF	FAIRCHILD	获取价格	D-PAK Tape and Reel Data
FQD13N10TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 10A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Met
FQD13N10TM	ONSEMI	获取价格	功率 MOSFET，N 沟道，QFET®，100 V，10 A，180 mΩ，DPAK
FQD14N15	FAIRCHILD	获取价格	150V N-Channel MOSFET
FQD14N15TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 10A I(D), 150V, 0.21ohm, 1-Element, N-Channel, Silicon, Met