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FQD17N08LTF PDF预览

FQD17N08LTF

更新时间: 2024-11-24 21:20:15
品牌 Logo 应用领域
飞兆/仙童 - FAIRCHILD 开关脉冲晶体管
页数 文件大小 规格书
8页 1261K
描述
Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

FQD17N08LTF 技术参数

是否Rohs认证: 符合生命周期:Obsolete
零件包装代码:TO-252包装说明:DPAK-3
针数:3Reach Compliance Code:not_compliant
ECCN代码:EAR99风险等级:5.19
雪崩能效等级(Eas):100 mJ外壳连接:DRAIN
配置:SINGLE WITH BUILT-IN DIODE最小漏源击穿电压:80 V
最大漏极电流 (Abs) (ID):12.9 A最大漏极电流 (ID):12.9 A
最大漏源导通电阻:0.115 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JEDEC-95代码:TO-252JESD-30 代码:R-PSSO-G2
JESD-609代码:e3湿度敏感等级:1
元件数量:1端子数量:2
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):260
极性/信道类型:N-CHANNEL最大功率耗散 (Abs):40 W
最大脉冲漏极电流 (IDM):51.6 A认证状态:Not Qualified
子类别:FET General Purpose Power表面贴装:YES
端子面层:Matte Tin (Sn)端子形式:GULL WING
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

FQD17N08LTF 数据手册

 浏览型号FQD17N08LTF的Datasheet PDF文件第2页浏览型号FQD17N08LTF的Datasheet PDF文件第3页浏览型号FQD17N08LTF的Datasheet PDF文件第4页浏览型号FQD17N08LTF的Datasheet PDF文件第5页浏览型号FQD17N08LTF的Datasheet PDF文件第6页浏览型号FQD17N08LTF的Datasheet PDF文件第7页 
November 2013  
FQD17N08L  
N-Channel QFET® MOSFET  
80 V, 12.9 A, 100 mΩ  
Description  
Features  
This N-Channel enhancement mode power MOSFET is  
produced using Fairchild Semiconductor’s proprietary planar  
stripe and DMOS technology. This advanced MOSFET  
technology has been especially tailored to reduce on-state  
resistance, and to provide superior switching performance  
and high avalanche energy strength. These devices are  
suitable for switched mode power supplies, audio amplifier,  
DC motor control, and variable switching power applications.  
12.9 A, 80 V, RDS(on) = 100 m(Max.) @ VGS = 10 V,  
ID = 6.45 A  
Low Gate Charge (Typ. 8.8 nC)  
Low Crss (Typ. 29 pF)  
100% Avalanche Tested  
D
D
G
G
S
D-PAK  
S
Absolute Maximum Ratings  
T = 25°C unless otherwise noted.  
C
Symbol  
VDSS  
Parameter  
FQD17N08LTM  
Unit  
V
Drain-Source Voltage  
80  
12.9  
8.2  
ID  
- Continuous (TC = 25°C)  
- Continuous (TC = 100°C)  
- Pulsed  
Drain Current  
A
A
IDM  
(Note 1)  
Drain Current  
51.6  
± 20  
100  
A
VGSS  
EAS  
IAR  
Gate-Source Voltage  
V
(Note 2)  
(Note 1)  
(Note 1)  
(Note 3)  
Single Pulsed Avalanche Energy  
Avalanche Current  
mJ  
A
12.9  
4.0  
EAR  
dv/dt  
PD  
Repetitive Avalanche Energy  
Peak Diode Recovery dv/dt  
Power Dissipation (TA = 25°C) *  
mJ  
V/ns  
W
6.5  
2.5  
Power Dissipation (TC = 25°C)  
40  
W
- Derate above 25°C  
0.32  
-55 to +150  
W/°C  
°C  
TJ, TSTG  
TL  
Operating and Storage Temperature Range  
Maximum lead temperature for soldering,  
1/8" from case for 5 seconds  
300  
°C  
Thermal Characteristics  
Symbol  
Parameter  
Thermal Resistance, Junction to Case, Max.  
FQD17N08LTM  
Unit  
RJC  
3.13  
110  
50  
Thermal Resistance, Junction to Ambient (Minimum Pad of 2-oz Copper), Max.  
Thermal Resistance, Junction to Ambient (*1 in2 Pad of 2-oz Copper), Max.  
oC/W  
RJA  
©2000 Fairchild Semiconductor Corporation  
FQD17N08L Rev. C1  
www.fairchildsemi.com  
1

FQD17N08LTF 替代型号

型号 品牌 替代类型 描述 数据表
FQD17N08LTM FAIRCHILD

完全替代

Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M

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