是否Rohs认证: | 符合 | 生命周期: | Obsolete |
零件包装代码: | TO-252 | 包装说明: | DPAK-3 |
针数: | 3 | Reach Compliance Code: | not_compliant |
ECCN代码: | EAR99 | 风险等级: | 5.19 |
雪崩能效等级(Eas): | 100 mJ | 外壳连接: | DRAIN |
配置: | SINGLE WITH BUILT-IN DIODE | 最小漏源击穿电压: | 80 V |
最大漏极电流 (Abs) (ID): | 12.9 A | 最大漏极电流 (ID): | 12.9 A |
最大漏源导通电阻: | 0.115 Ω | FET 技术: | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95代码: | TO-252 | JESD-30 代码: | R-PSSO-G2 |
JESD-609代码: | e3 | 湿度敏感等级: | 1 |
元件数量: | 1 | 端子数量: | 2 |
工作模式: | ENHANCEMENT MODE | 最高工作温度: | 150 °C |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | SMALL OUTLINE | 峰值回流温度(摄氏度): | 260 |
极性/信道类型: | N-CHANNEL | 最大功率耗散 (Abs): | 40 W |
最大脉冲漏极电流 (IDM): | 51.6 A | 认证状态: | Not Qualified |
子类别: | FET General Purpose Power | 表面贴装: | YES |
端子面层: | Matte Tin (Sn) | 端子形式: | GULL WING |
端子位置: | SINGLE | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
Base Number Matches: | 1 |
型号 | 品牌 | 替代类型 | 描述 | 数据表 |
FQD17N08LTM | FAIRCHILD |
完全替代 |
Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
FQD17N08LTM | ROCHESTER |
获取价格 |
12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 | |
FQD17N08LTM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M | |
FQD17N08LTM | ONSEMI |
获取价格 |
N 沟道 QFET® MOSFET 80V,12.9A,100mΩ | |
FQD17N08TF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M | |
FQD17N08TM | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M | |
FQD17P06 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQD17P06_09 | FAIRCHILD |
获取价格 |
60V P-Channel MOSFET | |
FQD17P06_13 | FAIRCHILD |
获取价格 |
P-Channel QFET MOSFET | |
FQD17P06TF | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Met | |
FQD17P06TF_NL | FAIRCHILD |
获取价格 |
Power Field-Effect Transistor, 12A I(D), 60V, 0.135ohm, 1-Element, P-Channel, Silicon, Met |