Datasheet > FQD19N10_13

FQD19N10_13

更新时间： 2024-10-02 12:05:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	545K
描述
N-Channel QFET MOSFET

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FQD19N10_13 数据手册

April 2013

FQD19N10

N-Channel QFET MOSFET

100 V, 15.6 A, 63 m

Description

Features

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor^®’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

audio amplifier, DC motor control, and variable switching

power applications.

•

15.6 A, 100 V, R_DS(on)= 63 m (Max) @ V_GS= 10 V,

_D= 7.8 A

•

Low Gate Charge (Typ. 19 nC)

Low Crss (Typ. 32 pF)

100% Avalanche Tested





 





D-PAK



Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

V_DSS

Parameter

FQD19N10

100

Unit

Drain-Source Voltage

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

Drain Current

15.6

9.8

I_DM

(Note 1)

Drain Current

62.4

 25

220

V_GSS

E_AS

I_AR

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

15.6

5.0

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25°C) *

V/ns

6.0

2.5

Power Dissipation (T_C= 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.4

W/°C

°C

T_J, T_STG

T_L

-55 to +150

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

FQD19N10

Unit

°C/W

R_JC

R_JA

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient, Max.

2.5

110

* When mounted on the minimum pad size recommended (PCB Mount)

FQD19N10TM Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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