Datasheet > FQD19N10LTM

FQD19N10LTM

更新时间： 2023-12-06 20:11:17

品牌	Logo	应用领域
安森美 - ONSEMI		/
页数	文件大小	规格书
8页	345K
描述
功率 MOSFET，N 沟道，逻辑电平，QFET?，100 V，15.6 A，100 mΩ，DPAK

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FQD19N10LTM 数据手册

DATA SHEET

www.onsemi.com

MOSFET – N-Channel, QFET

100 V, 15.6 A, 100 mW

MAX

I MAX

DSS

DS(on)

100 V

100 mW @ 10 V

15.6 A

FQD19N10L

Description

This N−Channel enhancement mode power MOSFET is produced

using onsemi’s proprietary planar stripe and DMOS technology. This

advanced MOSFET technology has been especially tailored to reduce

on−state resistance, and to provide superior switching performance

and high avalanche energy strength. These devices are suitable for

switched mode power supplies, audio amplifier, DC motor control,

and variable switching power applications.

DPAK3 (TO−252 3 LD)

CASE 369AS

MARKING DIAGRAM

Features

&Z&3&K

FQD

19N10L

• 15.6 A, 100 V, R

= 100 mΩ (Max.) @ V = 10 V

DS(on)

• Low Gate Charge (Typ. 14 nC)

• Low Crss (Typ. 35 pF)

= Assembly Plant Code

= 3−Digit Date Code

= 2−Digits Lot Run Traceability Code

• 100% Avalanche Tested

FQD19N10L = Device Code

ABSOLUTE MAXIMUM RATINGS (T = 25°C, unless otherwise noted)

Symbol

Parameter

Drain−Source Voltage

Ratings

100

15.6

9.8

Unit

DSS

Drain Current − Continuous (T = 25°C)

− Continuous (T = 100°C)

Drain Current − Pulsed (Note 1)

Gate−Source Voltage

62.4

GSS

Single Pulsed Avalanche Energy (Note 2)

Avalanche Current (Note 1)

220

15.6

5.0

Repetitive Avalanche Energy (Note 1)

Peak Diode Recovery dv/dt (Note 3)

V/ns

N−Channel MOSFET

dv/dt

6.0

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

ORDERING INFORMATION

See detailed ordering and shipping information on page 6 of

this data sheet.

− Derate Above 25°C

0.4

W/°C

°C

T , T

Operating and Storage Temperature Range −55 to +150

STG

Maximum Lead Temperature for Soldering,

1/8” from Case for 5 Seconds

300

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be affected.

THERMAL CHARACTERISTICS

Symbol

Parameter

Ratings

2.5

Unit

Thermal Resistance Junction to Case, Max.

°C/W

Thermal Resistance, Junction to Ambient

(Minimum Pad of 2−oz Copper), Max.

110

Thermal Resistance, Junction to Ambient

(*1 in Pad of 2−oz Copper), Max.

Publication Order Number:

September, 2023 − Rev. 3

FQD19N10L/D

12 3 4 5 6 7 8

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