Datasheet > FQD19N10L_13

FQD19N10L_13

更新时间： 2024-11-24 12:05:03

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
8页	530K
描述
N-Channel QFET MOSFET

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FQD19N10L_13 数据手册

March 2013

FQD19N10L

N-Channel QFET MOSFET

100 V, 15.6 A, 100 mΩ

Description

Features

This N-Channel enhancement mode power MOSFET is

produced using Fairchild Semiconductor^®’s proprietary

planar stripe and DMOS technology. This advanced

MOSFET technology has been especially tailored to reduce

on-state resistance, and to provide superior switching

performance and high avalanche energy strength. These

devices are suitable for switched mode power supplies,

audio amplifier, DC motor control, and variable switching

power applications.

•

15.6 A, 100 V, R_DS(on)= 100 mΩ (Max.) @ V_GS= 10 V

Low Gate Charge (Typ. 14 nC)

Low Crss (Typ. 35 pF)

100% Avalanche Tested





 





D-PAK



Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

V_DSS

Parameter

FQD19N10L

Unit

Drain-Source Voltage

100

15.6

9.8

I_D

- Continuous (T_C= 25°C)

- Continuous (T_C= 100°C)

- Pulsed

Drain Current

I_DM

(Note 1)

Drain Current

62.4

V_GSS

E_AS

I_AR

Gate-Source Voltage

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

220

15.6

5.0

E_AR

dv/dt

P_D

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

Power Dissipation (T_A= 25°C) *

V/ns

6.0

2.5

Power Dissipation (T_C= 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.4

W/°C

°C

T_J, T_STG

T_L

-55 to +150

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

FQD19N10L

Unit

R_θJC

R_θJA

Thermal Resistance, Junction-to-Case, Max.

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient, Max.

2.5

°C/W

110

* When mounted on the minimum pad size recommended (PCB Mount)

FQD19N10L Rev. C0

www.fairchildsemi.com

12 3 4 5 6 7 8

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