Datasheet > FQD19N10_09

FQD19N10_09

更新时间： 2024-11-24 12:23:39

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	684K
描述
100V N-Channel MOSFET

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FQD19N10_09 数据手册

January 2009

QFET^®

FQD19N10 / FQU19N10

100V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for low voltage applications such as audio amplifier,

high efficiency switching DC/DC converters, and DC motor

control.

•

15.6A, 100V, R

= 0.1Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 19 nC)

Low Crss ( typical 32 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

RoHS Compliant

! "

I-PAK

FQU Series

D-PAK

FQD Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD19N10 / FQU19N10

Units

Drain-Source Voltage

100

15.6

9.8

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

62.4

± 25

220

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

15.6

5.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

6.0

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.4

W/°C

°C

T , T

-55 to +150

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

2.5

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A1 January 2009

12 3 4 5 6 7...9

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