FQD17N08

更新时间： 2024-10-01 22:09:15

品牌	Logo	应用领域
飞兆/仙童 - FAIRCHILD		/
页数	文件大小	规格书
9页	598K
描述
80V N-Channel MOSFET

阅读下载

中文翻译

获取价格

数据手册
替代型号

如果您发现信息不准确，欢迎纠错

FQD17N08 数据手册

January 2001

QFET

FQD17N08 / FQU17N08

80V N-Channel MOSFET

General Description

Features

These N-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand a high energy pulse in the

avalanche and commutation modes. These devices are

well suited for low voltage applications such as automotive,

high efficiency switching for DC/DC converters, and DC

motor control.

•

12.9A, 80V, R

= 0.115Ω @V = 10 V

DS(on) GS

Low gate charge ( typical 12 nC)

Low Crss ( typical 28 pF)

Fast switching

100% avalanche tested

Improved dv/dt capability

! "

I-PAK

FQU Series

D-PAK

FQD Series

Absolute Maximum Ratings

T = 25°C unless otherwise noted

Symbol

Parameter

FQD17N08 / FQU17N08

Units

Drain-Source Voltage

12.9

8.2

DSS

- Continuous (T = 25°C)

Drain Current

- Continuous (T = 100°C)

(Note 1)

Drain Current

- Pulsed

51.6

± 25

100

Gate-Source Voltage

GSS

(Note 2)

(Note 1)

(Note 3)

Single Pulsed Avalanche Energy

Avalanche Current

12.9

4.0

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt

V/ns

dv/dt

6.5

Power Dissipation (T = 25°C) *

2.5

Power Dissipation (T = 25°C)

- Derate above 25°C

Operating and Storage Temperature Range

0.32

-55 to +150

W/°C

°C

T , T

STG

Maximum lead temperature for soldering purposes,

300

°C

1/8" from case for 5 seconds

Thermal Characteristics

Symbol

Parameter

Typ

Max

3.13

Units

°C/W

Thermal Resistance, Junction-to-Case

Thermal Resistance, Junction-to-Ambient *

Thermal Resistance, Junction-to-Ambient

θJC

θJA

110

* When mounted on the minimum pad size recommended (PCB Mount)

Rev. A1, January 2001

12 3 4 5 6 7...9

中文翻译

下载PDF

FQD17N08 替代型号

型号	品牌	替代类型	描述	数据表
FQD17N08TF	FAIRCHILD	功能相似	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M
FQD17N08TM	FAIRCHILD	功能相似	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M

与FQD17N08相关器件

型号	品牌	获取价格	描述	数据表
FQD17N08L	FAIRCHILD	获取价格	80V LOGIC N-Channel MOSFET
FQD17N08LTF	ROCHESTER	获取价格	12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD17N08LTF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M
FQD17N08LTM	ROCHESTER	获取价格	12.9A, 80V, 0.115ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3
FQD17N08LTM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M
FQD17N08LTM	ONSEMI	获取价格	N 沟道 QFET® MOSFET 80V，12.9A，100mΩ
FQD17N08TF	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M
FQD17N08TM	FAIRCHILD	获取价格	Power Field-Effect Transistor, 12.9A I(D), 80V, 0.115ohm, 1-Element, N-Channel, Silicon, M
FQD17P06	FAIRCHILD	获取价格	60V P-Channel MOSFET
FQD17P06_09	FAIRCHILD	获取价格	60V P-Channel MOSFET

与FQD17N08相关文章

塔塔电子与力积电达成技术转让协议，携手建设印度首座晶圆厂
2024-09-29

38
英特尔震撼发布：128核心256线程的至强6性能核处理器
2024-09-29

32
SK海力士量产12层HBM3E，容量高达36GB
2024-09-27

29
意法半导体传感器驱动Sphere，开启沉浸式电影新时代
2024-09-27

40

产品中心

服务支持

精选活动

关于我们

帮助中心

FQD17N08

FQD17N08 数据手册

FQD17N08 替代型号

与FQD17N08相关器件

与FQD17N08相关文章

您还可以找

产品中心

服务支持

精选活动

关于我们

帮助中心

FQD17N08

FQD17N08 数据手册

FQD17N08 替代型号

与FQD17N08相关器件

与FQD17N08相关文章

您还可以找

您在本页遇到什么问题？